Electron mobility related to scattering caused by the strain variation of algan barrier layer in strained algan/gan heterostructures
文献类型：期刊论文
| 作者 | Zhao, Jianzhi; Lin, Zhaojun; Corrigan, Timothy D.; Wang, Zhen; You, Zhidong; Wang, Zhanguo |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2007-10-22 |
| 卷号 | 91期号:17页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2798500 |
| 通讯作者 | Zhao, jianzhi(linzj@sdu.edu.cn) |
| 英文摘要 | Using the measured capacitance- voltage curves of ni schottky contacts with different areas on strained algan/ gan heterostructures and the current- voltage characteristics for the algan/ gan heterostructure field- effect transistors at low drain- source voltage, we found that the two- dimensional electron gas (2deg) electron mobility increased as the ni schottky contact area increased. when the gate bias increased from negative to positive, the 2deg electron mobility for the samples increased monotonically except for the sample with the largest ni schottky contact area. a new scattering mechanism is proposed, which is based on the polarization coulomb field scattering related to the strain variation of the algan barrier layer. (c) 2007 american institute of physics. |
| WOS关键词 | FIELD-EFFECT TRANSISTORS ; GAN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000250468200110 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427058 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Jianzhi |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Jianzhi,Lin, Zhaojun,Corrigan, Timothy D.,et al. Electron mobility related to scattering caused by the strain variation of algan barrier layer in strained algan/gan heterostructures[J]. Applied physics letters,2007,91(17):3. |
| APA | Zhao, Jianzhi,Lin, Zhaojun,Corrigan, Timothy D.,Wang, Zhen,You, Zhidong,&Wang, Zhanguo.(2007).Electron mobility related to scattering caused by the strain variation of algan barrier layer in strained algan/gan heterostructures.Applied physics letters,91(17),3. |
| MLA | Zhao, Jianzhi,et al."Electron mobility related to scattering caused by the strain variation of algan barrier layer in strained algan/gan heterostructures".Applied physics letters 91.17(2007):3. |
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来源：半导体研究所
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