Investigation of oxygen vacancy and interstitial oxygen defects in zno films by photoluminescence and x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Fan Hai-Bo; Yang Shao-Yan; Zhang Pan-Feng; Wei Hong-Yuan; Liu Xiang-Lin; Jiao Chun-Mei; Zhu Qin-Sheng; Chen Yong-Hai; Wang Zhan-Guo |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2007-07-01 |
| 卷号 | 24期号:7页码:2108-2111 |
| ISSN号 | 0256-307X |
| 通讯作者 | Fan hai-bo(hbfan@semi.ac.cn) |
| 英文摘要 | Zno films prepared at different temperatures and annealed at 900 degrees c in oxygen are studied by photoluminescence (pl) and x-ray photoelection spectroscopy (xps). it is observed that in the pl of the as-grown films the green luminescence (gl) and the yellow luminescence (yl) are related, and after annealing the gl is restrained and the yl is enhanced. the o 1s xps results also show the coexistence of oxygen vacancy (vo) and interstitial oxygen (o-i) before annealing and the quenching of the v-o after annealing. by combining the two results it is deduced that the gl and yl are related to the v-o and o-i defects, respectively. |
| WOS关键词 | THIN-FILMS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000247577900089 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427080 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fan Hai-Bo |
| 作者单位 | Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fan Hai-Bo,Yang Shao-Yan,Zhang Pan-Feng,et al. Investigation of oxygen vacancy and interstitial oxygen defects in zno films by photoluminescence and x-ray photoelectron spectroscopy[J]. Chinese physics letters,2007,24(7):2108-2111. |
| APA | Fan Hai-Bo.,Yang Shao-Yan.,Zhang Pan-Feng.,Wei Hong-Yuan.,Liu Xiang-Lin.,...&Wang Zhan-Guo.(2007).Investigation of oxygen vacancy and interstitial oxygen defects in zno films by photoluminescence and x-ray photoelectron spectroscopy.Chinese physics letters,24(7),2108-2111. |
| MLA | Fan Hai-Bo,et al."Investigation of oxygen vacancy and interstitial oxygen defects in zno films by photoluminescence and x-ray photoelectron spectroscopy".Chinese physics letters 24.7(2007):2108-2111. |
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来源：半导体研究所
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