A study on the minority carrier diffusion length in n-type gan films
文献类型：期刊论文
| 作者 | Deng Dongmei; Zhao Degang; Wang Jinyan; Yang Hui; Wen Cheng Paul |
| 刊名 | Rare metals
 |
| 出版日期 | 2007-06-01 |
| 卷号 | 26期号:3页码:271-275 |
| 关键词 | Compound semiconductor material Minority carrier diffusion length Photovoltaic spectrum Gan |
| ISSN号 | 1001-0521 |
| 通讯作者 | Deng dongmei(dmdeng@ime.pku.edu.cn) |
| 英文摘要 | The minority carrier diffusion length of n-type gan films grown by metalorganic chemical vapor deposition (mocvd) has been studied by measuring the surface photovoltaic (pv) spectra. it was found that the minority carrier diffusion length of undoped n-type gan is considerably larger than that in lightly si-doped gan. however, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. it is suggested that si doping plays an important role in decreasing the minority carrier diffusion length. |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000247953500014 |
| 出版者 | NONFERROUS METALS SOCIETY CHINA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427089 |
| 专题 | 半导体研究所 |
| 通讯作者 | Deng Dongmei |
| 作者单位 | 1.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Deng Dongmei,Zhao Degang,Wang Jinyan,et al. A study on the minority carrier diffusion length in n-type gan films[J]. Rare metals,2007,26(3):271-275. |
| APA | Deng Dongmei,Zhao Degang,Wang Jinyan,Yang Hui,&Wen Cheng Paul.(2007).A study on the minority carrier diffusion length in n-type gan films.Rare metals,26(3),271-275. |
| MLA | Deng Dongmei,et al."A study on the minority carrier diffusion length in n-type gan films".Rare metals 26.3(2007):271-275. |
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来源：半导体研究所
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