Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes
文献类型：期刊论文
| 作者 | Fu Sheng-Hui; Song Guo-Feng; Chen Liang-Hui |
| 刊名 | Chinese physics
 |
| 出版日期 | 2007-03-01 |
| 卷号 | 16期号:3页码:817-820 |
| 关键词 | Ingaalas/algaas Distributed feedback laser diode Numerical simulation |
| ISSN号 | 1009-1963 |
| 通讯作者 | Fu sheng-hui(fushenghui@red.semi.ac.cn) |
| 英文摘要 | Usually gaas/algaas is utilized as an active layer material in laser diodes operating in the spectral range of 800 850 nm. in this work, in addition to a traditional unstrained gaas/algaas distributed feedback (dfb) laser diode, a compressively strained ingaalas/algaas dfb laser diode is numerically investigated in characteristic. the simulation results show that the compressively strained dfb laser diode has a lower transparency carrier density, higher gain, lower auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained gaas/algaas dfb laser diode. |
| WOS关键词 | QUANTUM-WELL LASERS ; GAIN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000244864500043 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427094 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fu Sheng-Hui |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fu Sheng-Hui,Song Guo-Feng,Chen Liang-Hui. Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes[J]. Chinese physics,2007,16(3):817-820. |
| APA | Fu Sheng-Hui,Song Guo-Feng,&Chen Liang-Hui.(2007).Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes.Chinese physics,16(3),817-820. |
| MLA | Fu Sheng-Hui,et al."Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes".Chinese physics 16.3(2007):817-820. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。