Generation and suppression of deep level defects in inp
文献类型：期刊论文
| 作者 | Zhao You-Wen; Dong Zhi-Yuan |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2007-03-01 |
| 卷号 | 56期号:3页码:1476-1479 |
| 关键词 | Indium phosphide Annealing Defect |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhao you-wen(zhaoyw@red.semi.ac.cn) |
| 英文摘要 | Deep level defects in as-grown and annealed n-type and semi-insulating inp have been studied. after annealing in phosphorus ambient, a large quantity of deep level defects were generated in both n-type and semi-insulating inp materials. in contrast, few deep level defects exist in inp after annealing in iron phosphide ambient. the generation of deep level defects has direct relation with in-diffusion of iron and phosphorus in the annealing process. the in-diffused phosphorus and iron atoms occupy indium sites in the lattice, resulting in the formation of p anti-site defects and iron deep acceptors, respectively. t e results indicate that iron atoms fully occupy indium sites and suppress the formation of indium vacancy and p anti-site, etc., whereas indium vacancies and p anti-site defects. are formed after annealing in phosphor-us ambient. the nature of the deep level defects in inp has been studied based on the results. |
| WOS关键词 | ENCAPSULATED CZOCHRALSKI INP ; CONTROLLED PHOSPHORUS VAPOR ; UNDOPED SEMIINSULATING INP ; FE-DOPED INP ; N-TYPE INP ; ELECTRICAL-PROPERTIES ; COMPENSATION DEFECTS ; HEAT-TREATMENT ; SPECTROSCOPY ; TEMPERATURE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000244849500040 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427099 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao You-Wen |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao You-Wen,Dong Zhi-Yuan. Generation and suppression of deep level defects in inp[J]. Acta physica sinica,2007,56(3):1476-1479. |
| APA | Zhao You-Wen,&Dong Zhi-Yuan.(2007).Generation and suppression of deep level defects in inp.Acta physica sinica,56(3),1476-1479. |
| MLA | Zhao You-Wen,et al."Generation and suppression of deep level defects in inp".Acta physica sinica 56.3(2007):1476-1479. |
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来源：半导体研究所
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