中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Net-like ferromagnetic mnsb film deposited on porous silicon substrates

文献类型:期刊论文

作者Dai, Ruixuan; Chen, NuoFu; Zhang, X. W.; Peng, Changtao
刊名Journal of crystal growth
出版日期2007-02-01
卷号299期号:1页码:142-145
关键词Physical vapor deposition processes Manganese antimonide Porous silicon
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2006.11.132
通讯作者Dai, ruixuan(rxdai@red.semi.ac.cn)
英文摘要Mnsb films were deposited on porous silicon substrates by physical vapor deposition (pvd) technique. modulation effects due to the substrate on microstructure and magnetic properties of the mnsb film's were studied by scanning electron microscope (sem), x-ray diffraction (xrd) and measurements of hysteresis loops. sem images of the mnsb films indicate that net-like structures were obtained because of the special morphology of the substrates. the net-like mnsb films exhibit some novel magnetic properties different from the unpatterned referenced samples. for example, in the case of net-like morphology, the coercive field is as low as 60 oe. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词WIRES
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000244587600021
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2427115
专题半导体研究所
通讯作者Dai, Ruixuan
作者单位1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Dai, Ruixuan,Chen, NuoFu,Zhang, X. W.,et al. Net-like ferromagnetic mnsb film deposited on porous silicon substrates[J]. Journal of crystal growth,2007,299(1):142-145.
APA Dai, Ruixuan,Chen, NuoFu,Zhang, X. W.,&Peng, Changtao.(2007).Net-like ferromagnetic mnsb film deposited on porous silicon substrates.Journal of crystal growth,299(1),142-145.
MLA Dai, Ruixuan,et al."Net-like ferromagnetic mnsb film deposited on porous silicon substrates".Journal of crystal growth 299.1(2007):142-145.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。