Net-like ferromagnetic mnsb film deposited on porous silicon substrates
文献类型:期刊论文
作者 | Dai, Ruixuan; Chen, NuoFu; Zhang, X. W.; Peng, Changtao |
刊名 | Journal of crystal growth
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出版日期 | 2007-02-01 |
卷号 | 299期号:1页码:142-145 |
关键词 | Physical vapor deposition processes Manganese antimonide Porous silicon |
ISSN号 | 0022-0248 |
DOI | 10.1016/j.jcrysgro.2006.11.132 |
通讯作者 | Dai, ruixuan(rxdai@red.semi.ac.cn) |
英文摘要 | Mnsb films were deposited on porous silicon substrates by physical vapor deposition (pvd) technique. modulation effects due to the substrate on microstructure and magnetic properties of the mnsb film's were studied by scanning electron microscope (sem), x-ray diffraction (xrd) and measurements of hysteresis loops. sem images of the mnsb films indicate that net-like structures were obtained because of the special morphology of the substrates. the net-like mnsb films exhibit some novel magnetic properties different from the unpatterned referenced samples. for example, in the case of net-like morphology, the coercive field is as low as 60 oe. (c) 2006 elsevier b.v. all rights reserved. |
WOS关键词 | WIRES |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000244587600021 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427115 |
专题 | 半导体研究所 |
通讯作者 | Dai, Ruixuan |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Dai, Ruixuan,Chen, NuoFu,Zhang, X. W.,et al. Net-like ferromagnetic mnsb film deposited on porous silicon substrates[J]. Journal of crystal growth,2007,299(1):142-145. |
APA | Dai, Ruixuan,Chen, NuoFu,Zhang, X. W.,&Peng, Changtao.(2007).Net-like ferromagnetic mnsb film deposited on porous silicon substrates.Journal of crystal growth,299(1),142-145. |
MLA | Dai, Ruixuan,et al."Net-like ferromagnetic mnsb film deposited on porous silicon substrates".Journal of crystal growth 299.1(2007):142-145. |
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来源:半导体研究所
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