1.58 mu m ingaas quantum well laser on gaas
文献类型：期刊论文
| 作者 | Tangring, I.; Ni, H. Q.; Wu, B. P.; Wu, D. H.; Xiong, Y. H.; Huang, S. S.; Niu, Z. C.; Wang, S. M.; Lai, Z. H.; Larsson, A. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2007-11-26 |
| 卷号 | 91期号:22页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2803756 |
| 通讯作者 | Tangring, i.(ivar.tangring@mc2.chalmers.se) |
| 英文摘要 | We demonstrate the 1.58 mu m emission at room temperature from a metamorphic in(0.6)ga(0.4)as quantum well laser grown on gaas by molecular beam epitaxy. the large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual in(0.32)ga(0.68)as substrate. careful growth optimization ensured good optical and structural qualities. for a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 a/cm(2) was achieved under pulsed operation. this result indicates that metamorphic ingaas quantum wells can be an alternative approach for 1.55 mu m gaas-based lasers. (c) 2007 american institute of physics. |
| WOS关键词 | DOT LASERS ; GROWTH |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000251324600001 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427117 |
| 专题 | 半导体研究所 |
| 通讯作者 | Tangring, I. |
| 作者单位 | 1.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tangring, I.,Ni, H. Q.,Wu, B. P.,et al. 1.58 mu m ingaas quantum well laser on gaas[J]. Applied physics letters,2007,91(22):3. |
| APA | Tangring, I..,Ni, H. Q..,Wu, B. P..,Wu, D. H..,Xiong, Y. H..,...&Larsson, A..(2007).1.58 mu m ingaas quantum well laser on gaas.Applied physics letters,91(22),3. |
| MLA | Tangring, I.,et al."1.58 mu m ingaas quantum well laser on gaas".Applied physics letters 91.22(2007):3. |
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来源：半导体研究所
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