Subband electron properties of ingaas/inalas high-electron-mobility transistors with different channel chickness
文献类型：期刊论文
| 作者 | Gao Hong-Ling; Li Dong-Lin; Zhou Wen-Zheng; Shang Li-Yan; Wang Bao-Qiang; Zhu Zhan-Ping; Zeng Yi-Ping |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2007-08-01 |
| 卷号 | 56期号:8页码:4955-4959 |
| 关键词 | Channel thickness Two-dimensional electron gas Shubnikov-de haas oscillations High electron mobility transistor |
| ISSN号 | 1000-3290 |
| 通讯作者 | Gao hong-ling(hlgao@red.semi.ac.cn) |
| 英文摘要 | Magnetotransport properties of in-0.53 gaas/in-0.52 alas high electron mobility transistor (hemt) structures with different channel thickness of 10-35 nm have been investigated in magnetic fields up to 13 t at 1.4 k. fast fourier transform has been employed to obtain the subband density and mobility of the two-dimensional electron gas in these hemt structures. we found that the thickness of channel does not significantly enhance the electron density of the two-dimensional electron gas, however, it has strong effect on the proportion of electrons inhabited in different subbands. when the size of channel is 20 nm, the number of electrons occupying the excited subband, which have higher mobility, reaches the maximum. the experimental values obtained in this work are useful for the design and optimization of ingaas/inalas hemt devices. |
| WOS关键词 | QUANTUM-WELLS ; GAS ; TRANSPORT ; DENSITY ; SCATTERING ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000248684800097 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427118 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao Hong-Ling |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao Hong-Ling,Li Dong-Lin,Zhou Wen-Zheng,et al. Subband electron properties of ingaas/inalas high-electron-mobility transistors with different channel chickness[J]. Acta physica sinica,2007,56(8):4955-4959. |
| APA | Gao Hong-Ling.,Li Dong-Lin.,Zhou Wen-Zheng.,Shang Li-Yan.,Wang Bao-Qiang.,...&Zeng Yi-Ping.(2007).Subband electron properties of ingaas/inalas high-electron-mobility transistors with different channel chickness.Acta physica sinica,56(8),4955-4959. |
| MLA | Gao Hong-Ling,et al."Subband electron properties of ingaas/inalas high-electron-mobility transistors with different channel chickness".Acta physica sinica 56.8(2007):4955-4959. |
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来源：半导体研究所
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