Application of rapid thermal annealing on 1.3-1.55 mu m gainnas(sb) lasers grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zhao, H.; Xu, Y. Q.; Ni, H. Q.; Zhang, S. Y.; Han, Q.; Du, Y.; Yang, X. H.; Wu, R. H.; Niu, Z. C. |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007-04-01 |
| 卷号 | 301页码:979-983 |
| 关键词 | Photoluminescence Quantum well Rapid thermal annealing |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.11.307 |
| 通讯作者 | Zhao, h.(zhaohuan@red.semi.ac.cn) |
| 英文摘要 | Rapid thermal annealing (rta) has been demonstrated as an effective way to improve the crystal quality of gainnas(sb) quantum wells (qws). however, few investigations have been made into its application in laser growth and fabrication. we have fabricated 1.3 mu m gainnas lasers, both as -grown and with post-growth rta. enhanced photoluminescence (pl) intensity and decreased threshold current are obtained with rta, but the characteristic temperature t-o and slope efficiency deteriorate. furthermore, t-o has an abnormal dependence on the cavity length. we attribute these problems to the deterioration of the wafer's surface. rta with deposition of sio2 was performed to avoid this deterioration, t-o was improved over the samples that underwent rta without sio2. post-growth and in situ annealing were also investigated in a 1.55 mu m gainnassb system. finally, continuous operation at room temperature of a gaas-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | IMPROVED LUMINESCENCE EFFICIENCY ; QUANTUM-WELLS ; ORIGIN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000246015800226 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427129 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, H. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, H.,Xu, Y. Q.,Ni, H. Q.,et al. Application of rapid thermal annealing on 1.3-1.55 mu m gainnas(sb) lasers grown by molecular beam epitaxy[J]. Journal of crystal growth,2007,301:979-983. |
| APA | Zhao, H..,Xu, Y. Q..,Ni, H. Q..,Zhang, S. Y..,Han, Q..,...&Niu, Z. C..(2007).Application of rapid thermal annealing on 1.3-1.55 mu m gainnas(sb) lasers grown by molecular beam epitaxy.Journal of crystal growth,301,979-983. |
| MLA | Zhao, H.,et al."Application of rapid thermal annealing on 1.3-1.55 mu m gainnas(sb) lasers grown by molecular beam epitaxy".Journal of crystal growth 301(2007):979-983. |
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来源：半导体研究所
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