Synthesis of gan nanorods by ammoniating ga2o3 films on tio2 (rutile) layer deposited on si(111) substrates
文献类型：期刊论文
| 作者 | Lili Sun; Chengshan Xue; Chuanwei Sun; Yujie Ai; Huizhao Zhuang; Fuxue Wang; Jinhua Chen; Hong Li; Zhaozhu Yang; Lixia Qin |
| 刊名 | Materials letters
 |
| 出版日期 | 2007-12-01 |
| 卷号 | 61期号:30页码:5220-5222 |
| 关键词 | Epitaxial growth Crystal growth Gan Nanorods Tio2 |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2007.04.034 |
| 通讯作者 | Lili sun(aiyujie81@sina.com) |
| 英文摘要 | Gan nanorods have been synthesized by ammoniating ga2o3 films on a tio2 middle layer deposited on si(l 11) substrates. the products were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), fourier transformed infrared spectra (ftir) and high-resolution transmission electron microscopy (hrtem). the xrd analysis indicates that the crystallization of gan film fabricated on tio2 middle layer is rather excellent. the ftir, sem and hrtem demonstrate that these nanorods are hexagonal gan and possess a rough morphology with a diameter ranging from 200 nm to 500 nm and a length less than 10 mu m, the growth mechanism of crystalline gan nanorods is discussed briefly. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | THIN-FILMS ; NANOWIRES ; GROWTH ; CARBON ; NH3 |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000251202600011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427130 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lili Sun |
| 作者单位 | 1.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 2.Jinan Univ, Sch Informat Sci & Engn, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lili Sun,Chengshan Xue,Chuanwei Sun,et al. Synthesis of gan nanorods by ammoniating ga2o3 films on tio2 (rutile) layer deposited on si(111) substrates[J]. Materials letters,2007,61(30):5220-5222. |
| APA | Lili Sun.,Chengshan Xue.,Chuanwei Sun.,Yujie Ai.,Huizhao Zhuang.,...&Lixia Qin.(2007).Synthesis of gan nanorods by ammoniating ga2o3 films on tio2 (rutile) layer deposited on si(111) substrates.Materials letters,61(30),5220-5222. |
| MLA | Lili Sun,et al."Synthesis of gan nanorods by ammoniating ga2o3 films on tio2 (rutile) layer deposited on si(111) substrates".Materials letters 61.30(2007):5220-5222. |
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来源：半导体研究所
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