High performance 1689-nm quantum well diode lasers
文献类型：期刊论文
| 作者 | Duan, Yupeng1; Lin, Tao2; Wang, Cuiluan3; Chong, Feng3; Ma, Xiaoyu3 |
| 刊名 | Chinese optics letters
 |
| 出版日期 | 2007-10-10 |
| 卷号 | 5期号:10页码:585-587 |
| ISSN号 | 1671-7694 |
| 通讯作者 | Duan, yupeng(yupengduan@sina.com) |
| 英文摘要 | 1689-nm diode lasers used in medical apparatus have been fabricated and characterized. the lasers had pnpn inp current confinement structure, and the active region consisted of 5 pairs of ingaas quantum wells and ingaasp barriers. stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. after being cavity coated. and transistor outline (to) packaged, the lasers showed high performance in practice. the threshold current was about 13 +/- 4 ma, the operation current and the lasing spectrum were about 58 6 ma and 1689 +/- 6 nm at 6-mw output power, respectively. moreover, the maximum output power of the lasers was above 20 mw. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; MU-M ; ROOM-TEMPERATURE ; HIGH-POWER ; OPERATION ; CW |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000255024400009 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427132 |
| 专题 | 半导体研究所 |
| 通讯作者 | Duan, Yupeng |
| 作者单位 | 1.NW Univ Xian, Dept Phys, Xian 710069, Peoples R China 2.Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Duan, Yupeng,Lin, Tao,Wang, Cuiluan,et al. High performance 1689-nm quantum well diode lasers[J]. Chinese optics letters,2007,5(10):585-587. |
| APA | Duan, Yupeng,Lin, Tao,Wang, Cuiluan,Chong, Feng,&Ma, Xiaoyu.(2007).High performance 1689-nm quantum well diode lasers.Chinese optics letters,5(10),585-587. |
| MLA | Duan, Yupeng,et al."High performance 1689-nm quantum well diode lasers".Chinese optics letters 5.10(2007):585-587. |
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来源：半导体研究所
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