Fabrication of ultra-low density and long-wavelength emission inas quantum dots
文献类型：期刊论文
| 作者 | Huang, Shesong; Niu, Zhichuan; Ni, Haiqiao; Xiong, Yonghua; Zhan, Feng; Fang, Zhidan; Xia, Jianbai |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007-04-01 |
| 卷号 | 301页码:751-754 |
| 关键词 | Long wavelength Low density Molecular beam epitaxy Quantum dots |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.11.299 |
| 通讯作者 | Niu, zhichuan(zcniu@red.semi.ac.cn) |
| 英文摘要 | By optimizing the molecular beam epitaxy growth conditions of self-organized inas/gaas quantum dots (qds), we obtained an ultra-low density system of inas qds (4 x 10(6)cm(-2)). photoluminescence (pl) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a gaas capping layer. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | 1.3 MU-M ; 1300 NM ; GROWTH |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000246015800173 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427137 |
| 专题 | 半导体研究所 |
| 通讯作者 | Niu, Zhichuan |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Shesong,Niu, Zhichuan,Ni, Haiqiao,et al. Fabrication of ultra-low density and long-wavelength emission inas quantum dots[J]. Journal of crystal growth,2007,301:751-754. |
| APA | Huang, Shesong.,Niu, Zhichuan.,Ni, Haiqiao.,Xiong, Yonghua.,Zhan, Feng.,...&Xia, Jianbai.(2007).Fabrication of ultra-low density and long-wavelength emission inas quantum dots.Journal of crystal growth,301,751-754. |
| MLA | Huang, Shesong,et al."Fabrication of ultra-low density and long-wavelength emission inas quantum dots".Journal of crystal growth 301(2007):751-754. |
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来源：半导体研究所
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