中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Rate-equation-based circuit model of high-speed semiconductor lasers

文献类型:期刊论文

作者Zhang, S. J.; Zhu, N. H.; Pun, E. Y. B.; Chung, P. S.
刊名Microwave and optical technology letters
出版日期2007-03-01
卷号49期号:3页码:539-542
关键词Circuit model Nonlinear distortion Rate equations Semiconductor lasers
ISSN号0895-2477
DOI10.1002/mop.22180
通讯作者Zhang, s. j.()
英文摘要Based oil rare equations of semiconductor laser, a symbolically-defined model for optical transmission system performance evaluation and network characterization in both time- and frequency domains is presented. the steady-state and small-signal characteristics, such as current-photon density curve, current-voltage curve, and input impedance, call be predicted from this model. two important dynamic characteristics, second-order harmonic distortion and two-tone third-order intermodulation products, are evaluated under different driving conditions. experiments show that the simulated results agree well with the published data. (c) 2007 wiley periodicals, inc.
WOS关键词QUANTUM-WELL LASERS ; DIODE
WOS研究方向Engineering ; Optics
WOS类目Engineering, Electrical & Electronic ; Optics
语种英语
WOS记录号WOS:000244102500013
出版者JOHN WILEY & SONS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427139
专题半导体研究所
通讯作者Zhang, S. J.
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
2.City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
推荐引用方式
GB/T 7714
Zhang, S. J.,Zhu, N. H.,Pun, E. Y. B.,et al. Rate-equation-based circuit model of high-speed semiconductor lasers[J]. Microwave and optical technology letters,2007,49(3):539-542.
APA Zhang, S. J.,Zhu, N. H.,Pun, E. Y. B.,&Chung, P. S..(2007).Rate-equation-based circuit model of high-speed semiconductor lasers.Microwave and optical technology letters,49(3),539-542.
MLA Zhang, S. J.,et al."Rate-equation-based circuit model of high-speed semiconductor lasers".Microwave and optical technology letters 49.3(2007):539-542.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。