Morphological and electrical properties of inp grown by solid source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Pi, Biao; Shu, Yongchun; Lin, Yaowang; Sun, Jiaming; Qu, Shengchun; Yao, Jianghong; Xing, Xiaodong; Xu, Bo; Shu, Qiang; Wang, Zhanguo |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007-02-15 |
| 卷号 | 299期号:2页码:243-247 |
| ISSN号 | 0022-0248 |
| 关键词 | Electron concentration High electron mobility Surface morphology Inp epilayer Molecular beam epitaxy |
| DOI | 10.1016/j.jcrysgro.2006.11.219 |
| 通讯作者 | Pi, biao(pib@tedamail.nankai.edu.cn) |
| 英文摘要 | The properties of inp grown by solid source molecular beam epitaxy have been studied concerning electron mobility in correlation with surface morphology and carrier concentration. the surface roughness and carrier concentration exhibit pronounced dependences on growth temperature and v/iii flux ratio. a growth regime for a smooth surface and a high electron mobility is determined with growth temperature from 364-390 degrees c and v/iii flux ratio from 2.4 to 3.5. a inp film with maximum electron mobility of 4.57 x 10(4) cm(2)/v s at 77 k has been achieved. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | SURFACE-MORPHOLOGY ; LOW-TEMPERATURE ; GAAS(110) ; EVOLUTION ; LASERS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000244833100002 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427146 |
| 专题 | 半导体研究所 |
| 通讯作者 | Pi, Biao |
| 作者单位 | 1.Nankai Univ, Appl Phys Sch, TEDA,Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pi, Biao,Shu, Yongchun,Lin, Yaowang,et al. Morphological and electrical properties of inp grown by solid source molecular beam epitaxy[J]. Journal of crystal growth,2007,299(2):243-247. |
| APA | Pi, Biao.,Shu, Yongchun.,Lin, Yaowang.,Sun, Jiaming.,Qu, Shengchun.,...&Xu, Jingjun.(2007).Morphological and electrical properties of inp grown by solid source molecular beam epitaxy.Journal of crystal growth,299(2),243-247. |
| MLA | Pi, Biao,et al."Morphological and electrical properties of inp grown by solid source molecular beam epitaxy".Journal of crystal growth 299.2(2007):243-247. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。