Effects of buffer layers on the stress and morphology of gan epilayer grown on si substrate by mocvd
文献类型：期刊论文
| 作者 | Liu, Zhe; Wang, Xiaoliang; Wang, Junxi; Hu, Guoxin; Guo, Lunchun; Li, Jianping; Li, Jinmin; Zeng, Yiping |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298页码:281-283 |
| 关键词 | Characterization Crystal morphology Interfaces Metalorganic chemical vapor deposition Superlattices Nitrides |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.10.028 |
| 通讯作者 | Wang, xiaoliang(xlwang@red.semi.ac.cn) |
| 英文摘要 | Low temperature (lt) aln interlayer and insertion of superlattice are two effective methods to reduce crack and defects for gan grown on si substrate. in this paper, the influence of two kinds of buffer on stress, morphology and defects of gan/si are studied and discussed. the results measured by optical microscope and raman shift show that insertion of superlattice is more effective than insertion of lt-aln in preventing the formation of cracks in gan grown on si substrate. cross-sectional tem images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | TEMPERATURE ALN INTERLAYERS ; CHEMICAL-VAPOR-DEPOSITION ; SI(111) ; DIODES |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000244622600066 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427154 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Xiaoliang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Zhe,Wang, Xiaoliang,Wang, Junxi,et al. Effects of buffer layers on the stress and morphology of gan epilayer grown on si substrate by mocvd[J]. Journal of crystal growth,2007,298:281-283. |
| APA | Liu, Zhe.,Wang, Xiaoliang.,Wang, Junxi.,Hu, Guoxin.,Guo, Lunchun.,...&Zeng, Yiping.(2007).Effects of buffer layers on the stress and morphology of gan epilayer grown on si substrate by mocvd.Journal of crystal growth,298,281-283. |
| MLA | Liu, Zhe,et al."Effects of buffer layers on the stress and morphology of gan epilayer grown on si substrate by mocvd".Journal of crystal growth 298(2007):281-283. |
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来源：半导体研究所
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