中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Cathodoluminescence and raman research of v-shape inverted pyramid in hvpe grown gan film

文献类型:期刊论文

作者Wei, T. B.; Ma, P.; Duan, R. F.; Wang, J. X.; Li, J. M.; Liu, Zh.; Zeng, Y. P.
刊名Materials letters
出版日期2007-07-01
卷号61期号:18页码:3882-3885
关键词Gan Hvpe V-shape defects Cathodoluminescence Red emission
ISSN号0167-577X
DOI10.1016/j.matlet.2006.12.065
通讯作者Wei, t. b.(tbwei@semi.ac.cn)
英文摘要Thick gan films with high quality have been grown on (0001) sapphire substrate in a home-made vertical hvpe reactor. micron-size hexagonal pits with inverted pyramid shape appear on the film surface, which have six triangular {10-11} facets. these i {10-11} facets show strong luminescence emission and are characteristic of doped n-type materials. broad red emission is suppressed in {10-11} facets and is only found at the flat region out of the pit, which is related with the decreasing defects on {10-11} facets. low cl emission intensity is observed at the apex of v-shape pits due to the enhanced nonradiative recombination. raman spectra show that there are higher carrier concentration and low strain in the pit in comparison to the flat region out of the pit. the strain relaxation may be the main mechanism of the v-shape pits formation on the gan film surface. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词MULTIPLE-QUANTUM WELLS ; DEFECTS ; LAYERS ; DEPENDENCE ; MODES
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000248189100026
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2427158
专题半导体研究所
通讯作者Wei, T. B.
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
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Wei, T. B.,Ma, P.,Duan, R. F.,et al. Cathodoluminescence and raman research of v-shape inverted pyramid in hvpe grown gan film[J]. Materials letters,2007,61(18):3882-3885.
APA Wei, T. B..,Ma, P..,Duan, R. F..,Wang, J. X..,Li, J. M..,...&Zeng, Y. P..(2007).Cathodoluminescence and raman research of v-shape inverted pyramid in hvpe grown gan film.Materials letters,61(18),3882-3885.
MLA Wei, T. B.,et al."Cathodoluminescence and raman research of v-shape inverted pyramid in hvpe grown gan film".Materials letters 61.18(2007):3882-3885.

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来源:半导体研究所

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