Cathodoluminescence and raman research of v-shape inverted pyramid in hvpe grown gan film
文献类型:期刊论文
作者 | Wei, T. B.; Ma, P.; Duan, R. F.; Wang, J. X.; Li, J. M.; Liu, Zh.; Zeng, Y. P. |
刊名 | Materials letters
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出版日期 | 2007-07-01 |
卷号 | 61期号:18页码:3882-3885 |
关键词 | Gan Hvpe V-shape defects Cathodoluminescence Red emission |
ISSN号 | 0167-577X |
DOI | 10.1016/j.matlet.2006.12.065 |
通讯作者 | Wei, t. b.(tbwei@semi.ac.cn) |
英文摘要 | Thick gan films with high quality have been grown on (0001) sapphire substrate in a home-made vertical hvpe reactor. micron-size hexagonal pits with inverted pyramid shape appear on the film surface, which have six triangular {10-11} facets. these i {10-11} facets show strong luminescence emission and are characteristic of doped n-type materials. broad red emission is suppressed in {10-11} facets and is only found at the flat region out of the pit, which is related with the decreasing defects on {10-11} facets. low cl emission intensity is observed at the apex of v-shape pits due to the enhanced nonradiative recombination. raman spectra show that there are higher carrier concentration and low strain in the pit in comparison to the flat region out of the pit. the strain relaxation may be the main mechanism of the v-shape pits formation on the gan film surface. (c) 2006 elsevier b.v. all rights reserved. |
WOS关键词 | MULTIPLE-QUANTUM WELLS ; DEFECTS ; LAYERS ; DEPENDENCE ; MODES |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000248189100026 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427158 |
专题 | 半导体研究所 |
通讯作者 | Wei, T. B. |
作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wei, T. B.,Ma, P.,Duan, R. F.,et al. Cathodoluminescence and raman research of v-shape inverted pyramid in hvpe grown gan film[J]. Materials letters,2007,61(18):3882-3885. |
APA | Wei, T. B..,Ma, P..,Duan, R. F..,Wang, J. X..,Li, J. M..,...&Zeng, Y. P..(2007).Cathodoluminescence and raman research of v-shape inverted pyramid in hvpe grown gan film.Materials letters,61(18),3882-3885. |
MLA | Wei, T. B.,et al."Cathodoluminescence and raman research of v-shape inverted pyramid in hvpe grown gan film".Materials letters 61.18(2007):3882-3885. |
入库方式: iSwitch采集
来源:半导体研究所
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