Investigation of ge-si atomic interdiffusion in ge nano-dots multilayer structure by double crystal x-ray diffraction
文献类型：期刊论文
| 作者 | Shi, Wenhua; Zhao, Lei; Luo, Liping; Wang, Qiming |
| 刊名 | Journal of materials science & technology
 |
| 出版日期 | 2007-05-01 |
| 卷号 | 23期号:3页码:301-303 |
| 关键词 | X-ray diffraction Gesi Nano-dots Annealing Island |
| ISSN号 | 1005-0302 |
| 通讯作者 | Shi, wenhua(whshi@red.semi.ac.cn) |
| 英文摘要 | The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal x-ray diffraction (dcxrd) pattern. it is found that the width of the 0(th) peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. by this method, the ge-si atomic interdiffusion in ge nano-dots and wetting layers has been investigated by dcxrd. it is found that thermal annealing can activate ge-si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. therefore the fluctuation of the ge layer decreases and the distribution of ge atoms becomes homogeneous in the horizontal ge (gesi actually) layer, which make the width of the 0(th) peak narrow after annealing. |
| WOS关键词 | 1.55 MU-M ; QUANTUM DOTS ; SUPERLATTICES ; GAAS |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000247220600002 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427170 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shi, Wenhua |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, Wenhua,Zhao, Lei,Luo, Liping,et al. Investigation of ge-si atomic interdiffusion in ge nano-dots multilayer structure by double crystal x-ray diffraction[J]. Journal of materials science & technology,2007,23(3):301-303. |
| APA | Shi, Wenhua,Zhao, Lei,Luo, Liping,&Wang, Qiming.(2007).Investigation of ge-si atomic interdiffusion in ge nano-dots multilayer structure by double crystal x-ray diffraction.Journal of materials science & technology,23(3),301-303. |
| MLA | Shi, Wenhua,et al."Investigation of ge-si atomic interdiffusion in ge nano-dots multilayer structure by double crystal x-ray diffraction".Journal of materials science & technology 23.3(2007):301-303. |
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来源：半导体研究所
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