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Electronic structure in gaas/alxga1-xas spherical quantum dots

文献类型:期刊论文

作者Wang Chuan-Dao
刊名Acta physica sinica
出版日期2008-02-01
卷号57期号:2页码:1091-1096
关键词Spherical quantum dot Analytical method Plane wave method Effective mass
ISSN号1000-3290
通讯作者Wang chuan-dao(sirwangdao@sina.com)
英文摘要In this paper, how the dots' radius, at concentration and external electric field affect the single electron energy states in gaas/alxga1-xas spherical quantum dots are discussed in detail. furthermore, the modification of the energy states is calculated when the difference in effective electron mass in gaas and alxga1-xas are considered. in addition, both the analytical method and the plane wave method are used in calculation and the results are compared, showing that they are in good agreement with each other. the results and methods can provide useful information for the future research and potential applications of quantum dots.
WOS关键词EFFECTIVE-MASS THEORY ; STATES ; ENERGIES ; EXCITON ; GAAS
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000253432100074
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427176
专题半导体研究所
通讯作者Wang Chuan-Dao
作者单位Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
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Wang Chuan-Dao. Electronic structure in gaas/alxga1-xas spherical quantum dots[J]. Acta physica sinica,2008,57(2):1091-1096.
APA Wang Chuan-Dao.(2008).Electronic structure in gaas/alxga1-xas spherical quantum dots.Acta physica sinica,57(2),1091-1096.
MLA Wang Chuan-Dao."Electronic structure in gaas/alxga1-xas spherical quantum dots".Acta physica sinica 57.2(2008):1091-1096.

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来源:半导体研究所

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