Single-photon-emitting diode at liquid nitrogen temperature
文献类型：期刊论文
| 作者 | Dou, X. M.; Chang, X. Y.; Sun, B. Q.; Xiong, Y. H.; Niu, Z. C.; Huang, S. S.; Ni, H. Q.; Du, Y.; Xia, J. B. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-09-08 |
| 卷号 | 93期号:10页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2980517 |
| 通讯作者 | Dou, x. m.() |
| 英文摘要 | We report on the study of a single-photon-emitting diode at 77 k. the device is composed of inas/gaas quantum dots embedded in the i-region of a p-i-n diode structure. the high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g((2))(0), implies that the device has a low multiphoton emission probability. by comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g((2))(0), and provided some useful information for the future application. (c) 2008 american institute of physics. |
| WOS关键词 | QUANTUM-DOT ; DEVICE ; LIGHT |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000259797000007 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427185 |
| 专题 | 半导体研究所 |
| 通讯作者 | Dou, X. M. |
| 作者单位 | CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dou, X. M.,Chang, X. Y.,Sun, B. Q.,et al. Single-photon-emitting diode at liquid nitrogen temperature[J]. Applied physics letters,2008,93(10):3. |
| APA | Dou, X. M..,Chang, X. Y..,Sun, B. Q..,Xiong, Y. H..,Niu, Z. C..,...&Xia, J. B..(2008).Single-photon-emitting diode at liquid nitrogen temperature.Applied physics letters,93(10),3. |
| MLA | Dou, X. M.,et al."Single-photon-emitting diode at liquid nitrogen temperature".Applied physics letters 93.10(2008):3. |
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来源：半导体研究所
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