Cathodoluminescence study of gan-based film structures
文献类型：期刊论文
| 作者 | Jiang, D. S.1; Jahn, U.2; Chen, J.1; Li, D. Y.1; Zhang, S. M.1; Zhu, J. J.1; Zhao, D. G.1; Liu, Z. S.1; Yang, H.1; Ploog, K.2 |
| 刊名 | Journal of materials science-materials in electronics
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 19页码:S58-s63 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-007-9559-z |
| 通讯作者 | Jiang, d. s.(dsjiang@red.semi.ac.cn) |
| 英文摘要 | Gan films grown on sapphire substrate with an emphasis on epitaxial lateral overgrown (elog) layers with an array of rhombic shaped mask area as well as ingan/gan mqw laser diode layer structures were investigated by cathodoluminescence (cl) spectroscopy and cl imaging at room and low temperatures. the microscopic imaging with a high-spatial resolution clearly reveals the distribution of threading dislocations and point defects in elog gan films. the secondary electron and cl data measured on cleaved faces of laser diodes are analyzed in consideration with luminescence mechanisms in semiconductor heterostructures and around the p - n junction, providing important information on the defects and carrier dynamics in laser diode devices. |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000260288100012 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427190 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jiang, D. S. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany |
| 推荐引用方式 GB/T 7714 | Jiang, D. S.,Jahn, U.,Chen, J.,et al. Cathodoluminescence study of gan-based film structures[J]. Journal of materials science-materials in electronics,2008,19:S58-s63. |
| APA | Jiang, D. S..,Jahn, U..,Chen, J..,Li, D. Y..,Zhang, S. M..,...&Ploog, K..(2008).Cathodoluminescence study of gan-based film structures.Journal of materials science-materials in electronics,19,S58-s63. |
| MLA | Jiang, D. S.,et al."Cathodoluminescence study of gan-based film structures".Journal of materials science-materials in electronics 19(2008):S58-s63. |
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来源：半导体研究所
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