A simple method for the growth of high-quality gan nanobelts
文献类型:期刊论文
作者 | Xue, Shoubin1; Zhang, Xing1; Huang, Ru1; Tian, Deheng2; Zhuang, Huizhao2; Xue, Chengshan2 |
刊名 | Materials letters
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出版日期 | 2008-06-30 |
卷号 | 62期号:17-18页码:2743-2745 |
关键词 | Gan nanobelts Single crystal Ammoniation technique Sputtering |
ISSN号 | 0167-577X |
DOI | 10.1016/j.matlet.2008.01.031 |
通讯作者 | Xue, shoubin(xueshoubin-pku@163.com) |
英文摘要 | A simple method using two-step growth technology to successfully synthesize the high-quality single crystalline gan nanobelts was employed in this paper. the as-prepared products are studied by x-ray diffraction (xrd), scanning electron microscopy (sem) and high-resolution transmission electron microscopy (hrtem). the results of xrd and the selective area electron diffraction (saed) patterns indicate that the reflections of the samples can be indexed to the hexagonal gan phase with single-crystal structure. from the sem morphology, we can see that the width of the nanobelts is about 800 nm, and the ratio of thickness to width is about 1/10. the maximum length is up to several tens of micrometers. in the hrtem image, the clear lattice fringes indicate the growth of good-quality hexagonal single-crystal gan nanobelts. finally, the growth mechanism is also briefly discussed. (c) 2008 published by elsevier b.v. |
WOS关键词 | GALLIUM NITRIDE NANOBELTS ; NANOWIRES ; ROUTE |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000256780700057 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427191 |
专题 | 半导体研究所 |
通讯作者 | Xue, Shoubin |
作者单位 | 1.Peking Univ, Inst Microelect, SOI Grp, Beijing 100871, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Xue, Shoubin,Zhang, Xing,Huang, Ru,et al. A simple method for the growth of high-quality gan nanobelts[J]. Materials letters,2008,62(17-18):2743-2745. |
APA | Xue, Shoubin,Zhang, Xing,Huang, Ru,Tian, Deheng,Zhuang, Huizhao,&Xue, Chengshan.(2008).A simple method for the growth of high-quality gan nanobelts.Materials letters,62(17-18),2743-2745. |
MLA | Xue, Shoubin,et al."A simple method for the growth of high-quality gan nanobelts".Materials letters 62.17-18(2008):2743-2745. |
入库方式: iSwitch采集
来源:半导体研究所
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