中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A simple method for the growth of high-quality gan nanobelts

文献类型:期刊论文

作者Xue, Shoubin1; Zhang, Xing1; Huang, Ru1; Tian, Deheng2; Zhuang, Huizhao2; Xue, Chengshan2
刊名Materials letters
出版日期2008-06-30
卷号62期号:17-18页码:2743-2745
关键词Gan nanobelts Single crystal Ammoniation technique Sputtering
ISSN号0167-577X
DOI10.1016/j.matlet.2008.01.031
通讯作者Xue, shoubin(xueshoubin-pku@163.com)
英文摘要A simple method using two-step growth technology to successfully synthesize the high-quality single crystalline gan nanobelts was employed in this paper. the as-prepared products are studied by x-ray diffraction (xrd), scanning electron microscopy (sem) and high-resolution transmission electron microscopy (hrtem). the results of xrd and the selective area electron diffraction (saed) patterns indicate that the reflections of the samples can be indexed to the hexagonal gan phase with single-crystal structure. from the sem morphology, we can see that the width of the nanobelts is about 800 nm, and the ratio of thickness to width is about 1/10. the maximum length is up to several tens of micrometers. in the hrtem image, the clear lattice fringes indicate the growth of good-quality hexagonal single-crystal gan nanobelts. finally, the growth mechanism is also briefly discussed. (c) 2008 published by elsevier b.v.
WOS关键词GALLIUM NITRIDE NANOBELTS ; NANOWIRES ; ROUTE
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000256780700057
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2427191
专题半导体研究所
通讯作者Xue, Shoubin
作者单位1.Peking Univ, Inst Microelect, SOI Grp, Beijing 100871, Peoples R China
2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Xue, Shoubin,Zhang, Xing,Huang, Ru,et al. A simple method for the growth of high-quality gan nanobelts[J]. Materials letters,2008,62(17-18):2743-2745.
APA Xue, Shoubin,Zhang, Xing,Huang, Ru,Tian, Deheng,Zhuang, Huizhao,&Xue, Chengshan.(2008).A simple method for the growth of high-quality gan nanobelts.Materials letters,62(17-18),2743-2745.
MLA Xue, Shoubin,et al."A simple method for the growth of high-quality gan nanobelts".Materials letters 62.17-18(2008):2743-2745.

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来源:半导体研究所

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