Photoluminescence properties of tensile-strained gaasp/gainp single quantum wells grown by metal organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhong, Li; Ma, Xaoyu |
| 刊名 | Japanese journal of applied physics
 |
| 出版日期 | 2008-09-01 |
| 卷号 | 47期号:9页码:7026-7031 |
| 关键词 | Tensile strain Gaasp/gainp Photoluminescence Quantum well Laser diodes Lp-mocvd |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.47.7026 |
| 通讯作者 | Zhong, li(zhongli@semi.ac.cn) |
| 英文摘要 | Tensile-strained gaasp/gainp single quantum well (qw) laser diode (i-d) structures have been grown by low-pressure metal organic chemical vapor deposition (lp-mocvd) and related photoluminescence (pl) properties have been investigated in detail. the samples have the same well thickness of 16 nm but different p compositions in a gaasp qw. two peaks in room temperature (rt) pl spectra are observed for samples with a composition larger than 0.10. temperature and excitation-power-dependent pl spectra have been measured for a sample with it p composition of 0.15. it is found that the two peaks have a 35 mev energy separation independent of temperature and only the low-energy peak exists below 85 k. additionally, both peak intensities exhibit a monotonous increase as excitation power increases. analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-hh). a theoretical calculation based oil model-solid theory, taking, into account the spin-orbit splitting energy, shows good agreement with our experimental results. the temperature dependence of pl intensity ratio is well explained using the spontaneous emission theory for e-hh and e-hh transitions. front which the ratio can be characterized mainly by the energy separation between the fill and ill states. |
| WOS关键词 | ROOM-TEMPERATURE PHOTOLUMINESCENCE ; MOLECULAR-BEAM EPITAXY ; VALENCE-BAND STRUCTURE ; POWER LASER-DIODES ; ACTIVE REGIONS ; HETEROSTRUCTURES ; DEFORMATION ; EXCITONS ; MODEL ; HOLE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000259657700004 |
| 出版者 | JAPAN SOCIETY APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427193 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhong, Li |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhong, Li,Ma, Xaoyu. Photoluminescence properties of tensile-strained gaasp/gainp single quantum wells grown by metal organic chemical vapor deposition[J]. Japanese journal of applied physics,2008,47(9):7026-7031. |
| APA | Zhong, Li,&Ma, Xaoyu.(2008).Photoluminescence properties of tensile-strained gaasp/gainp single quantum wells grown by metal organic chemical vapor deposition.Japanese journal of applied physics,47(9),7026-7031. |
| MLA | Zhong, Li,et al."Photoluminescence properties of tensile-strained gaasp/gainp single quantum wells grown by metal organic chemical vapor deposition".Japanese journal of applied physics 47.9(2008):7026-7031. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。