High-temperature aln interlayer for crack-free algan growth on gan
文献类型：期刊论文
| 作者 | Sun, Qian1; Wang, Jianteng1; Wang, Hui1; Jin, Ruiqin1; Jiang, Desheng1; Zhu, Jianjun1; Zhao, Degang1; Yang, Hui1; Zhou, Shengqiang2,3; Wu, Mingfang2,3 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2008-08-15 |
| 卷号 | 104期号:4页码:4 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2968546 |
| 通讯作者 | Sun, qian(sunqian519@gmail.com) |
| 英文摘要 | This paper presents a study of the transformation of high-temperature aln (ht-aln) interlayer (il) and its effect on the strain relaxation of al(0.25)ga(0.75)n/ht-aln/gan. the ht-aln il capped with al(0.25)ga(0.75)n transforms into algan il in which the al composition increases with the ht-aln il thickness while the total ga content keeps nearly constant. during the ht-aln il growth on gan, the tensile stress is relieved through the formation of v trenches. the filling up of the v trenches by the subsequent al(0.25)ga(0.75)n growth is identified as the ga source for the il transformation, whose effect is very different from a direct growth of ht-algan il. the a-type dislocations generated during the advancement of v trenches and their filling up propagate into the al(0.25)ga(0.75)n overlayer. the a-type dislocation density increases dramatically with the il thickness, which greatly enhances the strain relaxation of al(0.25)ga(0.75)n. (c) 2008 american institute of physics. |
| WOS关键词 | STRESS ; SI(111) ; REDUCTION ; THICKNESS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000259265100029 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427194 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, Qian |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Katholieke Univ Leuven, Inst Kern Stralingsfys, B-3001 Heverlee, Belgium 3.Katholieke Univ Leuven, INPAC, B-3001 Heverlee, Belgium |
| 推荐引用方式 GB/T 7714 | Sun, Qian,Wang, Jianteng,Wang, Hui,et al. High-temperature aln interlayer for crack-free algan growth on gan[J]. Journal of applied physics,2008,104(4):4. |
| APA | Sun, Qian.,Wang, Jianteng.,Wang, Hui.,Jin, Ruiqin.,Jiang, Desheng.,...&Vantomme, Andre.(2008).High-temperature aln interlayer for crack-free algan growth on gan.Journal of applied physics,104(4),4. |
| MLA | Sun, Qian,et al."High-temperature aln interlayer for crack-free algan growth on gan".Journal of applied physics 104.4(2008):4. |
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来源：半导体研究所
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