Effect of annealing on photoluminescence properties of neon implanted gan
文献类型：期刊论文
| 作者 | Majid, Abdul1,2; Ali, Akbar1; Zhu, J. J.; Wang, Y. T.2; Liu, W.2; Lu, G. J.2; Liu, W. B.2; Zhang, L. Q.2; Liu, Z. S.2; Zhao, D. G.2 |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2008-01-21 |
| 卷号 | 41期号:2页码:5 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/41/2/025107 |
| 通讯作者 | Ali, akbar(akbar@qau.edu.pk) |
| 英文摘要 | The effect of thermal annealing on the luminescence properties of neon implanted gan thin films was studied. low temperature photoluminescence (pl) measurements were carried out on the samples implanted with different doses ranging from 10(14) to 9 x 10(15) cm(-2) and annealed isochronally at 800 and 900 degrees c. we observed a new peak appearing at 3.44 ev in the low temperative pl spectra of all the implanted samples after annealing at 900 degrees c. this peak has not been observed in the pl spectra of implanted samples annealed at 800 degrees c except for the samples implanted with the highest dose. the intensity of the yellow luminescence (yl) band noticed in the pl spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10(15) cm(-2). the appearance of a new peak at 3.44 ev and dose dependent suppression of the yl band are attributed to the dissociation of v(ga)o(n) complexes caused by high energy ion implantation. |
| WOS关键词 | LUMINESCENCE ; FILMS ; BAND |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000253177600022 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427196 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ali, Akbar |
| 作者单位 | 1.Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelectron, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Majid, Abdul,Ali, Akbar,Zhu, J. J.,et al. Effect of annealing on photoluminescence properties of neon implanted gan[J]. Journal of physics d-applied physics,2008,41(2):5. |
| APA | Majid, Abdul.,Ali, Akbar.,Zhu, J. J..,Wang, Y. T..,Liu, W..,...&Yang, H..(2008).Effect of annealing on photoluminescence properties of neon implanted gan.Journal of physics d-applied physics,41(2),5. |
| MLA | Majid, Abdul,et al."Effect of annealing on photoluminescence properties of neon implanted gan".Journal of physics d-applied physics 41.2(2008):5. |
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来源：半导体研究所
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