Synthesis of gan nanowires by tb catalysis
文献类型：期刊论文
| 作者 | Chen, Jinhua; Xue, Chengshan; Zhuang, Huizhao; Qin, Lixia; Li, Hong; Yang, Zhaozhu |
| 刊名 | Applied surface science
 |
| 出版日期 | 2008-05-30 |
| 卷号 | 254期号:15页码:4716-4719 |
| 关键词 | Gan Nanowires Sputtering Single-crystal growth |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2008.01.083 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Rare earth metal seed tb was employed as catalyst for the growth of gan wires. gan nanowires were synthesized successfully through ammoniating ga2o3/tb films sputtered on si(1 1 1) substrates. the samples characterization by x-ray diffraction and fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite gan. scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal gan nanowire structures. the growth mechanism of the gan nanowires is discussed. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | GALLIUM NITRIDE NANORODS ; AMMONIATING GA2O3 FILMS ; SELF-CATALYST ; THIN-FILMS ; GROWTH ; ABSORPTION ; CARBON ; LAYER |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000255511700046 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427200 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Jinhua,Xue, Chengshan,Zhuang, Huizhao,et al. Synthesis of gan nanowires by tb catalysis[J]. Applied surface science,2008,254(15):4716-4719. |
| APA | Chen, Jinhua,Xue, Chengshan,Zhuang, Huizhao,Qin, Lixia,Li, Hong,&Yang, Zhaozhu.(2008).Synthesis of gan nanowires by tb catalysis.Applied surface science,254(15),4716-4719. |
| MLA | Chen, Jinhua,et al."Synthesis of gan nanowires by tb catalysis".Applied surface science 254.15(2008):4716-4719. |
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来源：半导体研究所
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