Catalytic synthesis and luminescent characteristics of gan nanorods
文献类型：期刊论文
| 作者 | Chen Jin-Hua; Xue Cheng-Shan; Zhuang Hui-Zhao; Li Hong; Qin Li-Xia; Yang Zhao-Zhu |
| 刊名 | Acta physico-chimica sinica
 |
| 出版日期 | 2008-02-01 |
| 卷号 | 24期号:2页码:355-358 |
| 关键词 | Gan Nanorods Single crystal Luminescence |
| ISSN号 | 1000-6818 |
| DOI | 10.3866/pku.whxb20080230 |
| 通讯作者 | Xue cheng-shan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Rare earth metal seed tb was employed for the growth of gan nanorods. gan nanorods were synthesized successfully through ammoniating ga(2)o3/tb films sputtered on si(111) substrates. x-ray diffraction results indicated that the nanorods were hexagonal gan. observations using scanning electron microscopy and high-resolution transmission electron microscopy showed that gan was of single-crystal nanorod structure, with diameter 50-150 nm and length about 10 mu m. photoluminescence spectrum showed a strong uv emission peak at 368.6 nm, indicating that the products possess good luminescent characteristics. the growth mechanism of gan nanorods was also discussed. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; GALLIUM NITRIDE NANORODS ; SELF-CATALYST ; NANOWIRES ; GROWTH ; FILMS ; NANOTUBES |
| WOS研究方向 | Chemistry |
| WOS类目 | Chemistry, Physical |
| 语种 | 英语 |
| WOS记录号 | WOS:000253447600030 |
| 出版者 | PEKING UNIV PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427202 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue Cheng-Shan |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen Jin-Hua,Xue Cheng-Shan,Zhuang Hui-Zhao,et al. Catalytic synthesis and luminescent characteristics of gan nanorods[J]. Acta physico-chimica sinica,2008,24(2):355-358. |
| APA | Chen Jin-Hua,Xue Cheng-Shan,Zhuang Hui-Zhao,Li Hong,Qin Li-Xia,&Yang Zhao-Zhu.(2008).Catalytic synthesis and luminescent characteristics of gan nanorods.Acta physico-chimica sinica,24(2),355-358. |
| MLA | Chen Jin-Hua,et al."Catalytic synthesis and luminescent characteristics of gan nanorods".Acta physico-chimica sinica 24.2(2008):355-358. |
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来源：半导体研究所
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