High-efficiency phosphorescent organic light-emitting diode with au-doped n(+)-si anode
文献类型：期刊论文
| 作者 | Li, Yanzhao1; Ran, Guangzhao1; Zhao, Weiqiang1; Qin, Guogang1,2 |
| 刊名 | Japanese journal of applied physics
 |
| 出版日期 | 2008-11-01 |
| 卷号 | 47期号:11页码:8579-8582 |
| 关键词 | Silicon Phosphor Organic light-emitting device |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.47.8579 |
| 通讯作者 | Li, yanzhao() |
| 英文摘要 | In si photonics, the light source is a key. here, we demonstrate a highly efficient si-based light source in which bis(2-phenylpyridine) iridium(iii) acetylacetonate [(ppy)(2) ir(acac)] phosphor is used as emitters and a au-doped n(+)-si is used as a hole-injection adjustable anode. this si-based electrophosphorescent device achieves a power efficiency of 52.6 lm/w at 2.9v. which corresponds to a power conversion efficiency of 10.0%, a level that is sufficient for commercial use. |
| WOS关键词 | SILICON ANODE ; DEVICES ; RECOMBINATION ; COMPLEXES ; INJECTION ; MOBILITY ; METAL |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000261311400072 |
| 出版者 | JAPAN SOC APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427206 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Yanzhao |
| 作者单位 | 1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Yanzhao,Ran, Guangzhao,Zhao, Weiqiang,et al. High-efficiency phosphorescent organic light-emitting diode with au-doped n(+)-si anode[J]. Japanese journal of applied physics,2008,47(11):8579-8582. |
| APA | Li, Yanzhao,Ran, Guangzhao,Zhao, Weiqiang,&Qin, Guogang.(2008).High-efficiency phosphorescent organic light-emitting diode with au-doped n(+)-si anode.Japanese journal of applied physics,47(11),8579-8582. |
| MLA | Li, Yanzhao,et al."High-efficiency phosphorescent organic light-emitting diode with au-doped n(+)-si anode".Japanese journal of applied physics 47.11(2008):8579-8582. |
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来源：半导体研究所
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