Smart universal multiple-valued logic gates by transferring single electrons
文献类型：期刊论文
| 作者 | Zhang, Wan-Cheng; Wu, Nan-Jian |
| 刊名 | Ieee transactions on nanotechnology
 |
| 出版日期 | 2008-07-01 |
| 卷号 | 7期号:4页码:440-450 |
| 关键词 | Literal gate Multiple-valued logic Single-electron logic Single-electron turnstile |
| ISSN号 | 1536-125X |
| DOI | 10.1109/tnano.2008.920193 |
| 通讯作者 | Zhang, wan-cheng(zhangwc@red.semi.ac.cn) |
| 英文摘要 | This paper proposes smart universal multiple-valued (mv) logic gates by transferring single electrons (ses). the logic gates are based on mosfet based se turnstiles that can accurately transfer ses with high speed at high temperature. the number of electrons transferred per cycle by the se turnstile is a quantized function of its gate voltage, and this characteristic is fully exploited to compactly finish mv logic operations. first, we build arbitrary mv literal gates by using pairs of se turnstiles. then, we propose universal mv logic-to-value conversion gates and mv analog-digital conversion circuits. we propose a spice model to describe the behavior of the mosfet based se turnstile. we simulate the performances of the proposed gates. the mv logic gates have small number of transistors and low power dissipations. |
| WOS关键词 | ARITHMETIC OPERATIONS ; TUNNELING TRANSISTORS ; CONTROLLED TRANSPORT ; MOS-TRANSISTORS ; NEURAL-NETWORKS ; DEVICES ; TECHNOLOGY ; CHARGE ; BINARY ; MEMORY |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000258766300010 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427219 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Wan-Cheng |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Wan-Cheng,Wu, Nan-Jian. Smart universal multiple-valued logic gates by transferring single electrons[J]. Ieee transactions on nanotechnology,2008,7(4):440-450. |
| APA | Zhang, Wan-Cheng,&Wu, Nan-Jian.(2008).Smart universal multiple-valued logic gates by transferring single electrons.Ieee transactions on nanotechnology,7(4),440-450. |
| MLA | Zhang, Wan-Cheng,et al."Smart universal multiple-valued logic gates by transferring single electrons".Ieee transactions on nanotechnology 7.4(2008):440-450. |
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来源：半导体研究所
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