Band alignment of inn/gaas heterojunction determined by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Zhang, Riqing; Guo, Yan; Song, Huaping; Liu, Xianglin; Yang, Shaoyan; Wei, Hongyuan; Zhu, Qinsheng; Wang, Zhanguo |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-09-22 |
| 卷号 | 93期号:12页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2992194 |
| 通讯作者 | Zhang, riqing(zhangriq@semi.ac.cn) |
| 英文摘要 | The valence band offset (vbo) of the inn/gaas heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94 +/- 0.23 ev. the conduction band offset is deduced from the known vbo value to be 1.66 +/- 0.23 ev, and a type-ii band alignment forms at the inn/gaas heterojunction. (c) 2008 american institute of physics. |
| WOS关键词 | PHOTOEMISSION SPECTROSCOPY ; GAP STATES ; CONTINUUM ; LINEUPS ; INN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000259799100042 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427228 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Riqing |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Riqing,Guo, Yan,Song, Huaping,et al. Band alignment of inn/gaas heterojunction determined by x-ray photoelectron spectroscopy[J]. Applied physics letters,2008,93(12):3. |
| APA | Zhang, Riqing.,Guo, Yan.,Song, Huaping.,Liu, Xianglin.,Yang, Shaoyan.,...&Wang, Zhanguo.(2008).Band alignment of inn/gaas heterojunction determined by x-ray photoelectron spectroscopy.Applied physics letters,93(12),3. |
| MLA | Zhang, Riqing,et al."Band alignment of inn/gaas heterojunction determined by x-ray photoelectron spectroscopy".Applied physics letters 93.12(2008):3. |
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来源：半导体研究所
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