中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
An ultra-low power cmos random number generator

文献类型:期刊论文

作者Zhou, Sheng-hua; Zhang, Wancheng; Wu, Nan-Jian
刊名Solid-state electronics
出版日期2008-02-01
卷号52期号:2页码:233-238
关键词Random number generator Dual-drain mos transistor Noise Oscillator Low power system
ISSN号0038-1101
DOI10.1016/j.sse.2007.08.008
通讯作者Wu, nan-jian(nanjian@red.semi.ac.cn)
英文摘要This paper proposes an ultra-low power cmos random number generator (ring), which is based on an oscillator-sampling architecture. the noisy oscillator consists of a dual-drain mos transistor, a noise generator and a voltage control oscillator. the dual-drain mos transistor can bring extra-noise to the drain current or the output voltage so that the jitter of the oscillator is much larger than the normal oscillator. the frequency division ratio of the high-frequency sampling oscillator and the noisy oscillator is small. the rng has been fabricated in a 0.35 mu m cmos process. it can produce good quality bit streams without any post-processing. the bit rate of this rng could be as high as 100 kbps. it has a typical ultra-low power dissipation of 0.91 mu w. this novel circuit is a promising unit for low power system and communication applications. (c) 2007 elsevier ltd. all rights reserved.
WOS研究方向Engineering ; Physics
WOS类目Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000253310200013
出版者PERGAMON-ELSEVIER SCIENCE LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2427229
专题半导体研究所
通讯作者Wu, Nan-Jian
作者单位Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhou, Sheng-hua,Zhang, Wancheng,Wu, Nan-Jian. An ultra-low power cmos random number generator[J]. Solid-state electronics,2008,52(2):233-238.
APA Zhou, Sheng-hua,Zhang, Wancheng,&Wu, Nan-Jian.(2008).An ultra-low power cmos random number generator.Solid-state electronics,52(2),233-238.
MLA Zhou, Sheng-hua,et al."An ultra-low power cmos random number generator".Solid-state electronics 52.2(2008):233-238.

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来源:半导体研究所

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