Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd
文献类型：期刊论文
| 作者 | Luo, Weijun; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimie; Ran, Junxue; Guo, Lunchun; Li, Jianping; Liu, Hongxin; Chen, Yanling; Yang, Fuhua |
| 刊名 | Microelectronics journal
 |
| 出版日期 | 2008-09-01 |
| 卷号 | 39期号:9页码:1108-1111 |
| 关键词 | Algan/gan High electron mobility transistor (hemt) Si (111) |
| ISSN号 | 0026-2692 |
| DOI | 10.1016/j.mejo.2008.01.083 |
| 通讯作者 | Luo, weijun(yuntianbb@hotmail.com) |
| 英文摘要 | Algan/gan high electron mobility transistor (hemt) hetero-structures were grown on the 2-in si (1 1 1) substrate using metal-organic chemical vapor deposition (mocvd). low-temperature (lt) aln layers were inserted to relieve the tension stress during the growth of gan epilayers. the grown algan/gan hemt samples exhibited a maximum crack-free area of 8 mm x 5 mm, xrd gan (0 0 0 2) full-width at half-maximum (fwhm) of 661 arcsec and surface roughness of 0.377 nm. the device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 ma/mm, transconductance of 124 ms/mm and reverse gate leakage current of 0.76 mu a/mm at the gate voltage of -10 v. (c) 2008 published by elsevier ltd. |
| WOS关键词 | CRACK-FREE GAN ; BUFFER LAYERS ; SI ; POWER ; STRESS |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
| 语种 | 英语 |
| WOS记录号 | WOS:000259410500002 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427240 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, Weijun |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, Weijun,Wang, Xiaoliang,Xiao, Hongling,et al. Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd[J]. Microelectronics journal,2008,39(9):1108-1111. |
| APA | Luo, Weijun.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimie.,Ran, Junxue.,...&Li, Jinmin.(2008).Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd.Microelectronics journal,39(9),1108-1111. |
| MLA | Luo, Weijun,et al."Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd".Microelectronics journal 39.9(2008):1108-1111. |
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来源：半导体研究所
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