Fabrication, morphology, and photoluminescence properties of gan nanowires and nanorods by ammoniating ga2o3/v films on si(111)
文献类型：期刊论文
| 作者 | Yang, Zhaozhu; Xue, Chengshan; Zhuang, Huizhao; Qin, Lixia; Chen, Jinhua; Li, Hong; Zhang, Dongdong |
| 刊名 | Applied surface science
 |
| 出版日期 | 2008-04-30 |
| 卷号 | 254期号:13页码:4166-4170 |
| 关键词 | Gan Magnetron sputtering Ammoniating Vls mechanism |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2007.12.043 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Gan nanowires and nanorods have been successfully synthesized on si(1 1 1) substrates by magnetron sputtering through ammoniating ga2o3/v films at 900 degrees c in a quartz tube. x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscopy (hrtem), x-ray photoelectron spectroscopy (xps), and photoluminescence (pl) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of gan sample. the results show that the gan nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. the growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. the growth mechanism is also briefly discussed. (c) 2008 published by elsevier b.v. |
| WOS关键词 | GALLIUM NITRIDE ; LASER-ABLATION ; DEPOSITION ; NANOBELTS ; EPITAXY ; GROWTH |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000255344500068 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427244 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Zhaozhu,Xue, Chengshan,Zhuang, Huizhao,et al. Fabrication, morphology, and photoluminescence properties of gan nanowires and nanorods by ammoniating ga2o3/v films on si(111)[J]. Applied surface science,2008,254(13):4166-4170. |
| APA | Yang, Zhaozhu.,Xue, Chengshan.,Zhuang, Huizhao.,Qin, Lixia.,Chen, Jinhua.,...&Zhang, Dongdong.(2008).Fabrication, morphology, and photoluminescence properties of gan nanowires and nanorods by ammoniating ga2o3/v films on si(111).Applied surface science,254(13),4166-4170. |
| MLA | Yang, Zhaozhu,et al."Fabrication, morphology, and photoluminescence properties of gan nanowires and nanorods by ammoniating ga2o3/v films on si(111)".Applied surface science 254.13(2008):4166-4170. |
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来源：半导体研究所
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