Synthesis and properties of gan nanowires by rf magnetron sputtering
文献类型：期刊论文
| 作者 | Zhuang Huizhao1; Xue Shoubin2 |
| 刊名 | Chinese journal of physics
 |
| 出版日期 | 2008-04-01 |
| 卷号 | 46期号:2页码:163-169 |
| ISSN号 | 0577-9073 |
| 通讯作者 | Zhuang huizhao() |
| 英文摘要 | Gan nanowires have been successfully synthesized on si(111) substrates using magnetron sputtering by ammoniating the ga(2)o(3)/zno films at 950 degrees in a quartz tube. the gan nanowires have been characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), field-emission transmission electron microscopy (fetem), x-ray photoelectron spectroscopy (xps), and photoluminescence. the representative photoluminescence spectrum exhibits a strong emission peak at 375.7 nm, and two weak emission peaks at 434.8 nm and 472.9 nm. the results show that the gan nanowires have a single-crystal hexagonal wurtzite structure with a length of about several micrometers and diameters ranging from 60 nm to 160 nm, which is suitable for applications to nanodevices. |
| WOS关键词 | GALLIUM NITRIDE ; GROWTH ; DEPOSITION ; NANORODS ; FILMS ; CARBON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000257408800006 |
| 出版者 | PHYSICAL SOC REPUBLIC CHINA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427246 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhuang Huizhao |
| 作者单位 | 1.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 2.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhuang Huizhao,Xue Shoubin. Synthesis and properties of gan nanowires by rf magnetron sputtering[J]. Chinese journal of physics,2008,46(2):163-169. |
| APA | Zhuang Huizhao,&Xue Shoubin.(2008).Synthesis and properties of gan nanowires by rf magnetron sputtering.Chinese journal of physics,46(2),163-169. |
| MLA | Zhuang Huizhao,et al."Synthesis and properties of gan nanowires by rf magnetron sputtering".Chinese journal of physics 46.2(2008):163-169. |
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来源：半导体研究所
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