Ultrafast carrier dynamics in undoped and p-doped inas/gaas quantum dots characterized by pump-probe reflection measurements
文献类型：期刊论文
| 作者 | Liu, Hai-Ying1; Meng, Zi-Ming1; Dai, Qiao-Feng1; Wu, Li-Jun1; Guo, Qi1; Hu, Wei1; Liu, Song-Hao1; Lan, Sheng1; Yang, Tao2 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2008-04-15 |
| 卷号 | 103期号:8页码:8 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2913316 |
| 通讯作者 | Lan, sheng(slan@scnu.edu.cn) |
| 英文摘要 | We investigate the dependence of the differential reflection on the structure parameters of quantum dot (qd) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. it is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the qd layer. in addition, a comparison between the carrier dynamics in undoped and p-doped inas/gaas qds is carried out by pump-probe reflection measurements. the carrier capture time from the gaas barrier into the inas wetting layer and that from the inas wetting layer into the inas qds are extracted by appropriately fitting differential reflection spectra. moreover, the dependence of the carrier dynamics on the injected carrier density is identified. a detailed analysis of the carrier dynamics in the undoped and p-doped qds based on the differential reflection spectra is presented, and its difference with that derived from the time-resolved photoluminescence is discussed. (c) 2008 american institute of physics. |
| WOS关键词 | ENERGY RELAXATION ; ELECTRON RELAXATION ; CAPTURE ; PHONON ; INAS ; GAAS ; TEMPERATURE ; DEPENDENCE ; DENSITY ; TIME |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000255456200022 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427253 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lan, Sheng |
| 作者单位 | 1.S China Normal Univ, Sch Informat & Optoelect Sci & Technol, Lab Photon Informat Technol, Guangzhou 510006, Guangdong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Nano Optoelect Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Hai-Ying,Meng, Zi-Ming,Dai, Qiao-Feng,et al. Ultrafast carrier dynamics in undoped and p-doped inas/gaas quantum dots characterized by pump-probe reflection measurements[J]. Journal of applied physics,2008,103(8):8. |
| APA | Liu, Hai-Ying.,Meng, Zi-Ming.,Dai, Qiao-Feng.,Wu, Li-Jun.,Guo, Qi.,...&Yang, Tao.(2008).Ultrafast carrier dynamics in undoped and p-doped inas/gaas quantum dots characterized by pump-probe reflection measurements.Journal of applied physics,103(8),8. |
| MLA | Liu, Hai-Ying,et al."Ultrafast carrier dynamics in undoped and p-doped inas/gaas quantum dots characterized by pump-probe reflection measurements".Journal of applied physics 103.8(2008):8. |
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来源：半导体研究所
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