Low threshold lasing of gan-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
文献类型：期刊论文
| 作者 | Zhang, Jiang-Yong1,2,3; Cai, Li-E2,3; Zhang, Bao-Ping2,3,4; Li, Shui-Qing5; Lin, Feng1,5; Shang, Jing-Zhi2,3; Wang, Du-Xiang5; Lin, Ke-Chuang5; Yu, Jin-Zhong1,2,3; Wang, Qi-Ming1,2,3 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-11-10 |
| 卷号 | 93期号:19页码:3 |
| 关键词 | Gallium compounds Iii-v semiconductors Optical pumping Quantum well lasers Spontaneous emission Surface emitting lasers Wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3030876 |
| 通讯作者 | Zhang, jiang-yong() |
| 英文摘要 | We have fabricated and characterized gan-based vertical cavity surface emitting lasers (vcsels) with a unique active region structure, in which three sets of ingan asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mj/cm(2). the laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). the results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of gan-based vcsels. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000260944100018 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427254 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Jiang-Yong |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Xiamen Univ, Dept Phys, Xiamen 361005, Fujian, Peoples R China 3.Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China 4.Xiamen Univ, Pen Tung Sah MEMS Res Ctr, Xiamen 361005, Fujian, Peoples R China 5.Xiamen Sanan Elect Co,Ltd, Ctr Tech, Xiamen 361009, Fujian, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Jiang-Yong,Cai, Li-E,Zhang, Bao-Ping,et al. Low threshold lasing of gan-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region[J]. Applied physics letters,2008,93(19):3. |
| APA | Zhang, Jiang-Yong.,Cai, Li-E.,Zhang, Bao-Ping.,Li, Shui-Qing.,Lin, Feng.,...&Wang, Qi-Ming.(2008).Low threshold lasing of gan-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region.Applied physics letters,93(19),3. |
| MLA | Zhang, Jiang-Yong,et al."Low threshold lasing of gan-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region".Applied physics letters 93.19(2008):3. |
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来源：半导体研究所
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