中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Long-wavelength light emission from self-assembled heterojunction quantum dots

文献类型:期刊论文

作者Zhou, Zhiqiang; Xu, Yingqiang; Hao, Ruiting; Tang, Bao; Ren, Zhengwei; Niu, Zhichuan
刊名Journal of applied physics
出版日期2008-05-01
卷号103期号:9页码:3
ISSN号0021-8979
DOI10.1063/1.2919121
通讯作者Xu, yingqiang(yingqxu@semi.ac.cn)
英文摘要The authors report the optical characteristics of gasb/inas/gaas self-assembled heterojunction quantum dots (qds). with increasing gasb deposition, the room temperature emission wavelength can be extended to 1.56 mu m. the photoluminescence mechanism is considered to be a type-ii transition with electrons confined in inas and holes in gasb.(c) 2008 american institute of physics.
WOS关键词MU-M ; GAAS ; GROWTH ; EPITAXY
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000255983200133
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2427260
专题半导体研究所
通讯作者Xu, Yingqiang
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhou, Zhiqiang,Xu, Yingqiang,Hao, Ruiting,et al. Long-wavelength light emission from self-assembled heterojunction quantum dots[J]. Journal of applied physics,2008,103(9):3.
APA Zhou, Zhiqiang,Xu, Yingqiang,Hao, Ruiting,Tang, Bao,Ren, Zhengwei,&Niu, Zhichuan.(2008).Long-wavelength light emission from self-assembled heterojunction quantum dots.Journal of applied physics,103(9),3.
MLA Zhou, Zhiqiang,et al."Long-wavelength light emission from self-assembled heterojunction quantum dots".Journal of applied physics 103.9(2008):3.

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来源:半导体研究所

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