Long-wavelength light emission from self-assembled heterojunction quantum dots
文献类型：期刊论文
| 作者 | Zhou, Zhiqiang; Xu, Yingqiang; Hao, Ruiting; Tang, Bao; Ren, Zhengwei; Niu, Zhichuan |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2008-05-01 |
| 卷号 | 103期号:9页码:3 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2919121 |
| 通讯作者 | Xu, yingqiang(yingqxu@semi.ac.cn) |
| 英文摘要 | The authors report the optical characteristics of gasb/inas/gaas self-assembled heterojunction quantum dots (qds). with increasing gasb deposition, the room temperature emission wavelength can be extended to 1.56 mu m. the photoluminescence mechanism is considered to be a type-ii transition with electrons confined in inas and holes in gasb.(c) 2008 american institute of physics. |
| WOS关键词 | MU-M ; GAAS ; GROWTH ; EPITAXY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000255983200133 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427260 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, Yingqiang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Zhiqiang,Xu, Yingqiang,Hao, Ruiting,et al. Long-wavelength light emission from self-assembled heterojunction quantum dots[J]. Journal of applied physics,2008,103(9):3. |
| APA | Zhou, Zhiqiang,Xu, Yingqiang,Hao, Ruiting,Tang, Bao,Ren, Zhengwei,&Niu, Zhichuan.(2008).Long-wavelength light emission from self-assembled heterojunction quantum dots.Journal of applied physics,103(9),3. |
| MLA | Zhou, Zhiqiang,et al."Long-wavelength light emission from self-assembled heterojunction quantum dots".Journal of applied physics 103.9(2008):3. |
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来源：半导体研究所
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