Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of gan-based leds
文献类型：期刊论文
| 作者 | Gao, Haiyong; Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang, Guohong |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2008-06-07 |
| 卷号 | 41期号:11页码:5 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/41/11/115106 |
| 通讯作者 | Gao, haiyong(hygao@semi.ac.cn) |
| 英文摘要 | Nano-patterned sapphire substrates (npsss) were fabricated by a chemical wet etching technology using nano-sized sio(2) as masks. the npss was applied to improve the performance of gan-based light emitting diodes (leds). gan-based leds on npsss were grown by metal organic chemical vapour deposition. the characteristics of leds grown on npsss and conventional planar sapphire substrates were studied. the light output powers of the leds fabricated on npsss were considerably enhanced compared with that of the conventional leds grown on planar sapphire substrates. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; EPITAXIAL LATERAL OVERGROWTH ; EFFICIENCY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000256172200020 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427261 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, Haiyong |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Haiyong,Yan, Fawang,Zhang, Yang,et al. Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of gan-based leds[J]. Journal of physics d-applied physics,2008,41(11):5. |
| APA | Gao, Haiyong,Yan, Fawang,Zhang, Yang,Li, Jinmin,Zeng, Yiping,&Wang, Guohong.(2008).Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of gan-based leds.Journal of physics d-applied physics,41(11),5. |
| MLA | Gao, Haiyong,et al."Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of gan-based leds".Journal of physics d-applied physics 41.11(2008):5. |
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来源：半导体研究所
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