Evolution of ge and sige quantum dots under excimer laser annealing
文献类型：期刊论文
| 作者 | Han Gen-Quan1; Zeng Yu-Gang1; Yu Jin-Zhong1; Cheng Bu-Wen1; Yang Hai-Tao2 |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:1页码:242-245 |
| ISSN号 | 0256-307X |
| 通讯作者 | Han gen-quan(hgquan@red.semi.ac.cn) |
| 英文摘要 | We present different relaxation mechanisms of ge and sige quantum dots under excimer laser annealing. investigation of the coarsening and relaxation of the dots shows that the strain in ge dots on ge films is relaxed by dislocation since there is no interface between the ge dots and the ge layer, while the sige dots on si0.77ge0.23 film relax by lattice distortion to coherent clots, which results from the obvious interface between the sige clots and the si0.77ge0.23 film. the results are suggested and sustained by vanderbilt and wickham's theory, and also demonstrate that no bulk diffusion ogeurs during the excimer laser annealing. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000252613500066 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427272 |
| 专题 | 半导体研究所 |
| 通讯作者 | Han Gen-Quan |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Tsing Hua Univ, Dept Phys, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han Gen-Quan,Zeng Yu-Gang,Yu Jin-Zhong,et al. Evolution of ge and sige quantum dots under excimer laser annealing[J]. Chinese physics letters,2008,25(1):242-245. |
| APA | Han Gen-Quan,Zeng Yu-Gang,Yu Jin-Zhong,Cheng Bu-Wen,&Yang Hai-Tao.(2008).Evolution of ge and sige quantum dots under excimer laser annealing.Chinese physics letters,25(1),242-245. |
| MLA | Han Gen-Quan,et al."Evolution of ge and sige quantum dots under excimer laser annealing".Chinese physics letters 25.1(2008):242-245. |
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来源：半导体研究所
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