Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single ingaas/gaas quantum well
文献类型：期刊论文
| 作者 | Yang, L.1; Motohisa, J.2,3; Tomioka, K.2,3; Takeda, J.2,3; Fukui, T.2,3; geng, M. M.1; Jia, L. X.1; Zhang, L.1; Liu, Y. L.1 |
| 刊名 | Nanotechnology
 |
| 出版日期 | 2008-07-09 |
| 卷号 | 19期号:27页码:7 |
| ISSN号 | 0957-4484 |
| DOI | 10.1088/0957-4484/19/27/275304 |
| 通讯作者 | Yang, l.(lyang@semi.ac.cn) |
| 英文摘要 | Hexagonal nanopillars with a single ingaas/gaas quantum well (qw) were fabricated on a gaas (111) b substrate by selective-area metal-organic vapor phase epitaxy. the standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. zincblende structure and rotation twins were identified in both the gaas and the ingaas layers by electron diffraction. the excitation-power-density-dependent micro-photoluminescence (mu-pl) of the nanopillars was measured at 4.2, 50, 100 and 150 k. it was shown that, with increasing excitation power density, the mu-pl peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. it was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors. |
| WOS关键词 | INTERNAL ELECTRIC-FIELDS ; OPTICAL-PROPERTIES ; EPITAXIAL-GROWTH ; BUILDING-BLOCKS ; (111)B SURFACES ; NANOWIRES ; INTENSITY ; DEVICES ; GAAS |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000256456000007 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427289 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, L. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Optoelect Syst, Beijing 100083, Peoples R China 2.Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan 3.Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan |
| 推荐引用方式 GB/T 7714 | Yang, L.,Motohisa, J.,Tomioka, K.,et al. Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single ingaas/gaas quantum well[J]. Nanotechnology,2008,19(27):7. |
| APA | Yang, L..,Motohisa, J..,Tomioka, K..,Takeda, J..,Fukui, T..,...&Liu, Y. L..(2008).Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single ingaas/gaas quantum well.Nanotechnology,19(27),7. |
| MLA | Yang, L.,et al."Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single ingaas/gaas quantum well".Nanotechnology 19.27(2008):7. |
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来源：半导体研究所
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