Strain relaxation and band-gap tunability in ternary inxga1-xn nanowires
文献类型：期刊论文
| 作者 | Xiang, H. J.1; Wei, Su-Huai1; Da Silva, Juarez L. F.1; Li, Jingbo2 |
| 刊名 | Physical review b
 |
| 出版日期 | 2008-11-01 |
| 卷号 | 78期号:19页码:4 |
| 关键词 | Density functional theory Energy gap Enthalpy Gallium compounds Ground states Iii-v semiconductors Indium compounds Monte carlo methods Nanowires Semiconductor quantum wires Wide band gap semiconductors |
| ISSN号 | 1098-0121 |
| DOI | 10.1103/physrevb.78.193301 |
| 通讯作者 | Xiang, h. j.() |
| 英文摘要 | The alloy formation enthalpy and band structure of ingan nanowires were studied by a combined approach of the valence-force field model, monte carlo simulation, and density-functional theory (dft). for both random and ground-state structures of the coherent ingan alloy, the nanowire configuration was found to be more favorable for the strain relaxation than the bulk alloy. we proposed an analytical formula for computing the band gap of any ingan nanowires based on the results from the screened exchange hybrid dft calculations, which in turn reveals a better band-gap tunability in ternary ingan nanowires than the bulk alloy. |
| WOS关键词 | SPECIAL QUASIRANDOM STRUCTURES ; TOTAL-ENERGY CALCULATIONS ; AUGMENTED-WAVE METHOD ; BASIS-SET ; ALLOYS ; SEMICONDUCTORS ; INN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000262607800007 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427294 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xiang, H. J. |
| 作者单位 | 1.Natl Renewable Energy Lab, Golden, CO 80401 USA 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiang, H. J.,Wei, Su-Huai,Da Silva, Juarez L. F.,et al. Strain relaxation and band-gap tunability in ternary inxga1-xn nanowires[J]. Physical review b,2008,78(19):4. |
| APA | Xiang, H. J.,Wei, Su-Huai,Da Silva, Juarez L. F.,&Li, Jingbo.(2008).Strain relaxation and band-gap tunability in ternary inxga1-xn nanowires.Physical review b,78(19),4. |
| MLA | Xiang, H. J.,et al."Strain relaxation and band-gap tunability in ternary inxga1-xn nanowires".Physical review b 78.19(2008):4. |
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来源：半导体研究所
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