Effect of copassivation of cl and cu on cdte grain boundaries
文献类型：期刊论文
| 作者 | Zhang, Lixin1; Da Silva, Juarez L. F.1; Li, Jingbo2; Yan, Yanfa1; Gessert, T. A.1; Wei, Su-Huai1 |
| 刊名 | Physical review letters
 |
| 出版日期 | 2008-10-10 |
| 卷号 | 101期号:15页码:4 |
| ISSN号 | 0031-9007 |
| DOI | 10.1103/physrevlett.101.155501 |
| 通讯作者 | Zhang, lixin() |
| 英文摘要 | Using a first-principles method, we investigate the structural and electronic properties of grain boundaries (gbs) in polycrystalline cdte and the effects of copassivation of elements with far distinct electronegativities. of the two types of gbs studied in this letter, we find that the cd core is less harmful to the carrier transport, but is difficult to passivate with impurities such as cl and cu, whereas the te core creates a high defect density below the conduction band minimum, but all these levels can be removed by copassivation of cl and cu. our analysis indicates that for most polycrystalline systems copassivation or multipassivation is required to passivate the gbs. |
| WOS关键词 | POSITIONING TWIN BOUNDARIES ; INITIO MOLECULAR-DYNAMICS ; CDS/CDTE SOLAR-CELLS ; SEMICONDUCTORS ; ZNTE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000259965000037 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427296 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Lixin |
| 作者单位 | 1.Natl Renewable Energy Lab, Golden, CO 80401 USA 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Lixin,Da Silva, Juarez L. F.,Li, Jingbo,et al. Effect of copassivation of cl and cu on cdte grain boundaries[J]. Physical review letters,2008,101(15):4. |
| APA | Zhang, Lixin,Da Silva, Juarez L. F.,Li, Jingbo,Yan, Yanfa,Gessert, T. A.,&Wei, Su-Huai.(2008).Effect of copassivation of cl and cu on cdte grain boundaries.Physical review letters,101(15),4. |
| MLA | Zhang, Lixin,et al."Effect of copassivation of cl and cu on cdte grain boundaries".Physical review letters 101.15(2008):4. |
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来源：半导体研究所
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