Investigation of filling factor in in0.53ga0.47as/in0.52al0.48as quantum wells with two occupied subbands
文献类型:期刊论文
作者 | Shang Li-Yan1; Lin Tie1; Zhou Wen-Zheng1,2; Guo Shao-Ling1; Li Dong-Lin3; Gao Hong-Ling3; Cui Li-Jie3; Zeng Yi-Ping3; Chu Jun-Hao1,4 |
刊名 | Acta physica sinica
![]() |
出版日期 | 2008-06-01 |
卷号 | 57期号:6页码:3818-3822 |
关键词 | In0.53ga0.47as/in-0.52 al0.48as quantum well Filling factor Magnetotransport measurement |
ISSN号 | 1000-3290 |
通讯作者 | Shang li-yan(liyshang@mail.sitp.ac.en) |
英文摘要 | The magnetic field dependence of filling factors has been investigated on inp based in-0.53 ga0.47as/in-0.52 al-0.48 as quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5 k in a magnetic field range of 0 to 13 t. under the condiction that laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i. e. delta e-21 = khw(c). if the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i. e. delta e-21 = (2 k + 1) hw(c) /2, the filling factor is odd. |
WOS关键词 | ELECTRON-GAS |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000256874600085 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427297 |
专题 | 半导体研究所 |
通讯作者 | Shang Li-Yan |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Guangxi Univ, Phys Sci & Technol Coll, Nanning 530004, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 4.E China Normal Univ, ECNU SITP Joint Lab Imaging Informat, Shanghai 200062, Peoples R China |
推荐引用方式 GB/T 7714 | Shang Li-Yan,Lin Tie,Zhou Wen-Zheng,et al. Investigation of filling factor in in0.53ga0.47as/in0.52al0.48as quantum wells with two occupied subbands[J]. Acta physica sinica,2008,57(6):3818-3822. |
APA | Shang Li-Yan.,Lin Tie.,Zhou Wen-Zheng.,Guo Shao-Ling.,Li Dong-Lin.,...&Chu Jun-Hao.(2008).Investigation of filling factor in in0.53ga0.47as/in0.52al0.48as quantum wells with two occupied subbands.Acta physica sinica,57(6),3818-3822. |
MLA | Shang Li-Yan,et al."Investigation of filling factor in in0.53ga0.47as/in0.52al0.48as quantum wells with two occupied subbands".Acta physica sinica 57.6(2008):3818-3822. |
入库方式: iSwitch采集
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。