中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth

文献类型:期刊论文

作者Cheng, Baochang1,2; Yu, Xiaoming1,2; Liu, Hongjuan1,2; Wang, Zhanguo3
刊名Journal of physical chemistry c
出版日期2008-10-01
卷号112期号:42页码:16312-16317
ISSN号1932-7447
DOI10.1021/jp8045824
通讯作者Cheng, baochang(bcheng@vip.sina.com)
英文摘要Si-doped zno can be synthesized on the surface of the early grown zn2sio4 nanostructures and form core/ shell coaxial heterostructure nanobelts with an epitaxial orientation relationship. a parallel interface with a periodicity array of edge dislocations and an inclined interface without dislocations can be formed. the visible green emission is predominant in pl spectra due to carrier localization by high density of deep traps from complexes of impurities and defects. due to band tail localization induced by composition and defect fluctuation, and high density of free-carriers donated by doping, especially the further dissociation of excitons into free-carriers at high excitation intensity, the near-band-edge emission is dominated by the transition of free-electrons to free-holes, and furthermore, exhibits a significant excitation power-dependent red-shift characteristic. due to the structure relaxation and the thermalization effects, carrier delocalization takes place in deep traps with increasing excitation density. as a result, the green emission passes through a maximum at 0.25i(0) excitation intensity, and the ratio of the violet to green emission increases monotonously as the excitation laser power density increases. the violet and green emission of zno nanostructures can be well tuned by a moderate doping and a variation in the excitation density.
WOS关键词LOW-TEMPERATURE GROWTH ; ZNO NANOWIRES ; DOPED ZNO ; OPTICAL-PROPERTIES ; ZINC-OXIDE ; DEPOSITION METHOD ; ARRAYS ; FILMS ; PHOTOLUMINESCENCE ; NANOSTRUCTURES
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000260129400028
URI标识http://www.irgrid.ac.cn/handle/1471x/2427313
专题半导体研究所
通讯作者Cheng, Baochang
作者单位1.Nanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China
2.Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Cheng, Baochang,Yu, Xiaoming,Liu, Hongjuan,et al. Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth[J]. Journal of physical chemistry c,2008,112(42):16312-16317.
APA Cheng, Baochang,Yu, Xiaoming,Liu, Hongjuan,&Wang, Zhanguo.(2008).Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth.Journal of physical chemistry c,112(42),16312-16317.
MLA Cheng, Baochang,et al."Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth".Journal of physical chemistry c 112.42(2008):16312-16317.

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来源:半导体研究所

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