Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth
文献类型:期刊论文
作者 | Cheng, Baochang1,2; Yu, Xiaoming1,2; Liu, Hongjuan1,2; Wang, Zhanguo3 |
刊名 | Journal of physical chemistry c |
出版日期 | 2008-10-01 |
卷号 | 112期号:42页码:16312-16317 |
ISSN号 | 1932-7447 |
DOI | 10.1021/jp8045824 |
通讯作者 | Cheng, baochang(bcheng@vip.sina.com) |
英文摘要 | Si-doped zno can be synthesized on the surface of the early grown zn2sio4 nanostructures and form core/ shell coaxial heterostructure nanobelts with an epitaxial orientation relationship. a parallel interface with a periodicity array of edge dislocations and an inclined interface without dislocations can be formed. the visible green emission is predominant in pl spectra due to carrier localization by high density of deep traps from complexes of impurities and defects. due to band tail localization induced by composition and defect fluctuation, and high density of free-carriers donated by doping, especially the further dissociation of excitons into free-carriers at high excitation intensity, the near-band-edge emission is dominated by the transition of free-electrons to free-holes, and furthermore, exhibits a significant excitation power-dependent red-shift characteristic. due to the structure relaxation and the thermalization effects, carrier delocalization takes place in deep traps with increasing excitation density. as a result, the green emission passes through a maximum at 0.25i(0) excitation intensity, and the ratio of the violet to green emission increases monotonously as the excitation laser power density increases. the violet and green emission of zno nanostructures can be well tuned by a moderate doping and a variation in the excitation density. |
WOS关键词 | LOW-TEMPERATURE GROWTH ; ZNO NANOWIRES ; DOPED ZNO ; OPTICAL-PROPERTIES ; ZINC-OXIDE ; DEPOSITION METHOD ; ARRAYS ; FILMS ; PHOTOLUMINESCENCE ; NANOSTRUCTURES |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
WOS类目 | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
语种 | 英语 |
出版者 | AMER CHEMICAL SOC |
WOS记录号 | WOS:000260129400028 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427313 |
专题 | 半导体研究所 |
通讯作者 | Cheng, Baochang |
作者单位 | 1.Nanchang Univ, Inst Adv Studying, Nanchang 330031, Peoples R China 2.Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Cheng, Baochang,Yu, Xiaoming,Liu, Hongjuan,et al. Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth[J]. Journal of physical chemistry c,2008,112(42):16312-16317. |
APA | Cheng, Baochang,Yu, Xiaoming,Liu, Hongjuan,&Wang, Zhanguo.(2008).Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth.Journal of physical chemistry c,112(42),16312-16317. |
MLA | Cheng, Baochang,et al."Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth".Journal of physical chemistry c 112.42(2008):16312-16317. |
入库方式: iSwitch采集
来源:半导体研究所
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