Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions
文献类型：期刊论文
| 作者 | Wu, Yunlong1; Zhang, Liuwan1; Xie, Guanlin1; Zhu, Jia-Lin1; Chen, Yonghai2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-01-07 |
| 卷号 | 92期号:1页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2831913 |
| 通讯作者 | Zhang, liuwan(lwzhang@tsinghua.edu.cn) |
| 英文摘要 | (110) zno/(001) nb-1 wt %-doped srtio(3) n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. a diodelike current behavior was observed. different from conventional p-n junctions or schottky diodes, the diffusion voltage was found to increase with temperature. at all temperatures, the forward current was perfectly fitted on the thermionic emission model. the band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction. (c) 2008 american institute of physics. |
| WOS关键词 | MANGANITE-BASED HETEROJUNCTION ; SCHOTTKY CONTACTS ; TUNNELING CURRENT ; ZNO |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000252284200083 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427314 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Liuwan |
| 作者单位 | 1.Tsing Hua Univ, Dept Phys, Adv Mat Lab, Beijing 100084, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Yunlong,Zhang, Liuwan,Xie, Guanlin,et al. Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions[J]. Applied physics letters,2008,92(1):3. |
| APA | Wu, Yunlong,Zhang, Liuwan,Xie, Guanlin,Zhu, Jia-Lin,&Chen, Yonghai.(2008).Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions.Applied physics letters,92(1),3. |
| MLA | Wu, Yunlong,et al."Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions".Applied physics letters 92.1(2008):3. |
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来源：半导体研究所
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