中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Valence band offset of mgo/4h-sic heterojunction measured by x-ray photoelectron spectroscopy

文献类型:期刊论文

作者Zhang, B. L.1; Cai, F. F.1; Sun, G. S.2; Fan, H. B.1; Zhang, P. F.1; Wei, H. Y.1; Liu, X. L.1; Yang, S. Y.1; Zhu, Q. S.1; Wang, Z. G.1
刊名Applied physics letters
出版日期2008-08-18
卷号93期号:7页码:3
ISSN号0003-6951
DOI10.1063/1.2975168
通讯作者Zhang, b. l.(zhangbaoli@semi.ac.cn)
英文摘要The valence band offset (vbo) of mgo (111)/4h-sic heterojunction has been directly measured by x-ray photoelectron spectroscopy. the vbo is determined to be 3.65 +/- 0.23 ev and the conduction band offset is deduced to be 0.92 +/- 0.23 ev, indicating that the heterojunction has a type- i band alignment. the accurate determination of the valence and conduction band offsets is important for the applications of mgo/sic optoelectronic devices. (c) 2008 american institute of physics.
WOS关键词MOLECULAR-BEAM EPITAXY ; MGO ; 6H-SIC(0001) ; INTEGRATION ; INN ; ALN ; GAN
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000259010300039
URI标识http://www.irgrid.ac.cn/handle/1471x/2427316
专题半导体研究所
通讯作者Zhang, B. L.
作者单位1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhang, B. L.,Cai, F. F.,Sun, G. S.,et al. Valence band offset of mgo/4h-sic heterojunction measured by x-ray photoelectron spectroscopy[J]. Applied physics letters,2008,93(7):3.
APA Zhang, B. L..,Cai, F. F..,Sun, G. S..,Fan, H. B..,Zhang, P. F..,...&Wang, Z. G..(2008).Valence band offset of mgo/4h-sic heterojunction measured by x-ray photoelectron spectroscopy.Applied physics letters,93(7),3.
MLA Zhang, B. L.,et al."Valence band offset of mgo/4h-sic heterojunction measured by x-ray photoelectron spectroscopy".Applied physics letters 93.7(2008):3.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。