Valence band offset of mgo/4h-sic heterojunction measured by x-ray photoelectron spectroscopy
文献类型:期刊论文
作者 | Zhang, B. L.1; Cai, F. F.1; Sun, G. S.2; Fan, H. B.1; Zhang, P. F.1; Wei, H. Y.1; Liu, X. L.1; Yang, S. Y.1; Zhu, Q. S.1; Wang, Z. G.1 |
刊名 | Applied physics letters |
出版日期 | 2008-08-18 |
卷号 | 93期号:7页码:3 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.2975168 |
通讯作者 | Zhang, b. l.(zhangbaoli@semi.ac.cn) |
英文摘要 | The valence band offset (vbo) of mgo (111)/4h-sic heterojunction has been directly measured by x-ray photoelectron spectroscopy. the vbo is determined to be 3.65 +/- 0.23 ev and the conduction band offset is deduced to be 0.92 +/- 0.23 ev, indicating that the heterojunction has a type- i band alignment. the accurate determination of the valence and conduction band offsets is important for the applications of mgo/sic optoelectronic devices. (c) 2008 american institute of physics. |
WOS关键词 | MOLECULAR-BEAM EPITAXY ; MGO ; 6H-SIC(0001) ; INTEGRATION ; INN ; ALN ; GAN |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000259010300039 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427316 |
专题 | 半导体研究所 |
通讯作者 | Zhang, B. L. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, B. L.,Cai, F. F.,Sun, G. S.,et al. Valence band offset of mgo/4h-sic heterojunction measured by x-ray photoelectron spectroscopy[J]. Applied physics letters,2008,93(7):3. |
APA | Zhang, B. L..,Cai, F. F..,Sun, G. S..,Fan, H. B..,Zhang, P. F..,...&Wang, Z. G..(2008).Valence band offset of mgo/4h-sic heterojunction measured by x-ray photoelectron spectroscopy.Applied physics letters,93(7),3. |
MLA | Zhang, B. L.,et al."Valence band offset of mgo/4h-sic heterojunction measured by x-ray photoelectron spectroscopy".Applied physics letters 93.7(2008):3. |
入库方式: iSwitch采集
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。