The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd
文献类型：期刊论文
| 作者 | Luo, Weijun; Wang, Xiaoliang; Guo, Lunchun; Xiao, Hongling; Wang, Cuimei; Ran, Junxue; Li, Jianping; Li, Jinmin |
| 刊名 | Superlattices and microstructures
 |
| 出版日期 | 2008-08-01 |
| 卷号 | 44期号:2页码:153-159 |
| 关键词 | Gallium nitride crack Low temperature aluminum nitride Interlayer Silicon |
| ISSN号 | 0749-6036 |
| DOI | 10.1016/j.spmi.2008.04.003 |
| 通讯作者 | Luo, weijun(luoweijun@mail.semi.ac.cn) |
| 英文摘要 | Low temperature (lt) aln interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the gan epilayer grown on si (111) substrate. optical microscopy (om), atomic force microscopy (afm), surface electron microscopy (sem) and x-ray diffraction (xrd) were employed to characterize these samples grown by metal-organic chemical vapor deposition (mocvd). in addition, wet etching method was used to evaluate the defect of the gan epilayer. the results demonstrate that the morphology and crystalline properties of the gan epilayer strongly depend on the thickness, interlayer number and growth temperature of the lt aln interlayer. with the optimized lt aln interlayer structures, high quality gan epilayers with a low crack density can be obtained. (c) 2008 elsevier ltd. all rights reserved. |
| WOS关键词 | CRACK-FREE GAN ; BUFFER LAYERS ; SI SUBSTRATE ; MOVPE GROWTH ; THICKNESS ; EPITAXY ; STRESS ; STRAIN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000258811700003 |
| 出版者 | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427323 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, Weijun |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, Weijun,Wang, Xiaoliang,Guo, Lunchun,et al. The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd[J]. Superlattices and microstructures,2008,44(2):153-159. |
| APA | Luo, Weijun.,Wang, Xiaoliang.,Guo, Lunchun.,Xiao, Hongling.,Wang, Cuimei.,...&Li, Jinmin.(2008).The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd.Superlattices and microstructures,44(2),153-159. |
| MLA | Luo, Weijun,et al."The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd".Superlattices and microstructures 44.2(2008):153-159. |
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来源：半导体研究所
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