中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low threshold current density 1.3 mu m metamorphic ingaas/gaas quantum well laser diodes

文献类型:期刊论文

作者Wu, D.1; Wang, H.1; Wu, B.1; Ni, H.1; Huang, S.1; Xiong, Y.1; Wang, P.1; Han, Q.1; Niu, Z.1; Tangring, I.2
刊名Electronics letters
出版日期2008-03-27
卷号44期号:7页码:474-u6
ISSN号0013-5194
DOI10.1049/el:20080106
通讯作者Wu, d.()
英文摘要Very low threshold current density ingaas/ gaas quantum well laser diodes grown by molecular beam epitaxy on ingaas metamorphic buffers are reported. the lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 a/cm(2) at room temperature under continuous-wave operation.
WOS关键词CONTINUOUS-WAVE OPERATION ; 1.3-MU-M
WOS研究方向Engineering
WOS类目Engineering, Electrical & Electronic
语种英语
WOS记录号WOS:000255465400014
出版者INST ENGINEERING TECHNOLOGY-IET
URI标识http://www.irgrid.ac.cn/handle/1471x/2427324
专题半导体研究所
通讯作者Wu, D.
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China
2.Chalmers, Dept microtechnol & Nanosci, S-41296 Gothenburg, Sweden
推荐引用方式
GB/T 7714
Wu, D.,Wang, H.,Wu, B.,et al. Low threshold current density 1.3 mu m metamorphic ingaas/gaas quantum well laser diodes[J]. Electronics letters,2008,44(7):474-u6.
APA Wu, D..,Wang, H..,Wu, B..,Ni, H..,Huang, S..,...&Wang, S. M..(2008).Low threshold current density 1.3 mu m metamorphic ingaas/gaas quantum well laser diodes.Electronics letters,44(7),474-u6.
MLA Wu, D.,et al."Low threshold current density 1.3 mu m metamorphic ingaas/gaas quantum well laser diodes".Electronics letters 44.7(2008):474-u6.

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来源:半导体研究所

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