Structural properties of ne implanted gan
文献类型：期刊论文
| 作者 | Majid, A.1,2; Ali, A.2; Zhu, J. J.1; Liu, W.1; Lu, G. J.1; Liu, Wb1; Zhang, L. Q.1; Liu, Z. S.1; Wang, H.1; Zhao, D. G.1 |
| 刊名 | Physica scripta
 |
| 出版日期 | 2008-03-01 |
| 卷号 | 77期号:3页码:4 |
| ISSN号 | 0031-8949 |
| DOI | 10.1088/0031-8949/77/03/035601 |
| 通讯作者 | Majid, a.(abdulmajid40@yahoo.com) |
| 英文摘要 | We report a study on the micro-structural changes in gan due to neon ion implantation using the x-ray diffraction and raman scattering techniques. an implantation dose of 10(14) cm(-2) was found unable to produce lattice deformation observable by raman measurements. for higher doses of implantation several disorder activated raman scattering centers were observed which corroborate the literature. a new dose dependent feature has been recorded at 1595 cm(-1) for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice. |
| WOS关键词 | RAMAN-SCATTERING ; HE ; PHOTOLUMINESCENCE ; IMPURITIES ; CAVITIES ; BUBBLES ; INP ; SI |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000254329000013 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427336 |
| 专题 | 半导体研究所 |
| 通讯作者 | Majid, A. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan |
| 推荐引用方式 GB/T 7714 | Majid, A.,Ali, A.,Zhu, J. J.,et al. Structural properties of ne implanted gan[J]. Physica scripta,2008,77(3):4. |
| APA | Majid, A..,Ali, A..,Zhu, J. J..,Liu, W..,Lu, G. J..,...&Israr, M..(2008).Structural properties of ne implanted gan.Physica scripta,77(3),4. |
| MLA | Majid, A.,et al."Structural properties of ne implanted gan".Physica scripta 77.3(2008):4. |
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来源：半导体研究所
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