Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m
文献类型：期刊论文
| 作者 | Mao, R. W.1; Tsai, C. S.1,2; Yu, J. Z.3; Wang, Q. M.3 |
| 刊名 | Optics communications
 |
| 出版日期 | 2008-03-15 |
| 卷号 | 281期号:6页码:1582-1587 |
| 关键词 | Resonant cavity enhanced (rce) Photodetector Line-width Free carrier absorption |
| ISSN号 | 0030-4018 |
| DOI | 10.1016/j.optcom.2007.11.081 |
| 通讯作者 | Tsai, c. s.(cstsai@uci.edu) |
| 英文摘要 | A method for fabrication of long-wavelength narrow line-width ingaas resonant cavity enhanced (rce) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. a full width at half maximum (fwhm) of 0.7 nm and a peak responsivity of 0. 16 a/w at the resonance wavelength of 1.55 mu m have been accomplished by using a thick inp layer as part of the resonant cavity. the effects of roughness and tilt of the inp layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the rce photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | N-TYPE INP ; WAVELENGTH ; ABSORPTION |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000253612300038 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427341 |
| 专题 | 半导体研究所 |
| 通讯作者 | Tsai, C. S. |
| 作者单位 | 1.Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA 2.Natl Taiwan Univ, Inst Electroopt Engn, Taipei 10617, Taiwan 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Mao, R. W.,Tsai, C. S.,Yu, J. Z.,et al. Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m[J]. Optics communications,2008,281(6):1582-1587. |
| APA | Mao, R. W.,Tsai, C. S.,Yu, J. Z.,&Wang, Q. M..(2008).Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m.Optics communications,281(6),1582-1587. |
| MLA | Mao, R. W.,et al."Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m".Optics communications 281.6(2008):1582-1587. |
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来源：半导体研究所
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