Effects of external magnetic field on the effective g factor of (ga,mn)as
文献类型：期刊论文
| 作者 | Zhou Rong; Sun Bao-Quan; Ruan Xue-Zhong; Gan Hua-Dong; Ji Yang; Wang Wei-Zhu; Zhao Jian-Hua |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2008-08-01 |
| 卷号 | 57期号:8页码:5244-5248 |
| 关键词 | Time resolved kerr rotation measurement Zeeman effect Ruderman-kittel-kasuya-yosida model |
| ISSN号 | 1000-3290 |
| 通讯作者 | Sun bao-quan(bqsun@red.semi.ac.cn) |
| 英文摘要 | With the help of time resolved magneto-optic kerr rotation measurements, the optically induced spin precession in heavily doped diluted magnetic semiconductor ga(0.937)mn(0.063) as was observed. it was found that the effective g factor increases with increasing magnetic field, which is attributed to the magnetic-field-induced increase of the density of the non-localized holes. those free holes will couple with the localized magnetic ions by p-d interactions, leading to the formation of spontaneous magnetization in ga(0.937)mn(0.063)as, which in turn to the enhancement of the effective g factor. |
| WOS关键词 | ELECTRONIC-STRUCTURE ; MANGANESE ACCEPTOR ; GALLIUM-ARSENIDE ; QUANTUM-WELLS ; SEMICONDUCTORS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000258602600091 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427343 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun Bao-Quan |
| 作者单位 | Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou Rong,Sun Bao-Quan,Ruan Xue-Zhong,et al. Effects of external magnetic field on the effective g factor of (ga,mn)as[J]. Acta physica sinica,2008,57(8):5244-5248. |
| APA | Zhou Rong.,Sun Bao-Quan.,Ruan Xue-Zhong.,Gan Hua-Dong.,Ji Yang.,...&Zhao Jian-Hua.(2008).Effects of external magnetic field on the effective g factor of (ga,mn)as.Acta physica sinica,57(8),5244-5248. |
| MLA | Zhou Rong,et al."Effects of external magnetic field on the effective g factor of (ga,mn)as".Acta physica sinica 57.8(2008):5244-5248. |
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来源：半导体研究所
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